Influence of in composition on the photoluminescence emission of In(Ga)As quantum dot bilayers

M. A. Migliorato, M. J. Steer, W. M. Soong, C. M. Tey, H. Y. Liu, S. L. Liew, P. Navaretti, D. J. Norris, A. G. Cullis, M. Hopkinson

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. Use of a kinetic segregation model has shown that a reduction of the In composition for the upper layer of a bilayer structure can be used to compensate for the excess In that exists on the surface prior to growth. Three samples have been grown with upper dot In compositions varying from 90% to 100% and have been investigated by means of optical spectroscopy and electron microscopy. © 2004 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)124-128
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume26
    Issue number1-4
    DOIs
    Publication statusPublished - Feb 2005

    Keywords

    • Molecular beam epitaxy
    • Quantum dots
    • Spectroscopy

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