Influence of in composition on the photoluminescence emission of In(Ga)As quantum dot bilayers

M. A. Migliorato; M. J. Steer; W. M. Soong; C. M. Tey; H. Y. Liu; S. L. Liew; P. Navaretti; D. J. Norris; A. G. Cullis; M. Hopkinson

doi:10.1016/j.physe.2004.08.037

Influence of in composition on the photoluminescence emission of In(Ga)As quantum dot bilayers

M. A. Migliorato
, M. J. Steer
, W. M. Soong
, C. M. Tey
, H. Y. Liu
, S. L. Liew
, P. Navaretti
, D. J. Norris
, A. G. Cullis
, M. Hopkinson

Research output: Contribution to journal › Article › peer-review

Abstract

We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. Use of a kinetic segregation model has shown that a reduction of the In composition for the upper layer of a bilayer structure can be used to compensate for the excess In that exists on the surface prior to growth. Three samples have been grown with upper dot In compositions varying from 90% to 100% and have been investigated by means of optical spectroscopy and electron microscopy. © 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	124-128
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	26
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physe.2004.08.037
Publication status	Published - Feb 2005

Keywords

Molecular beam epitaxy
Quantum dots
Spectroscopy

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10.1016/j.physe.2004.08.037

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title = "Influence of in composition on the photoluminescence emission of In(Ga)As quantum dot bilayers",

abstract = "We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. Use of a kinetic segregation model has shown that a reduction of the In composition for the upper layer of a bilayer structure can be used to compensate for the excess In that exists on the surface prior to growth. Three samples have been grown with upper dot In compositions varying from 90\% to 100\% and have been investigated by means of optical spectroscopy and electron microscopy. {\textcopyright} 2004 Elsevier B.V. All rights reserved.",

keywords = "Molecular beam epitaxy, Quantum dots, Spectroscopy",

author = "Migliorato, \{M. A.\} and Steer, \{M. J.\} and Soong, \{W. M.\} and Tey, \{C. M.\} and Liu, \{H. Y.\} and Liew, \{S. L.\} and P. Navaretti and Norris, \{D. J.\} and Cullis, \{A. G.\} and M. Hopkinson",

note = "Times Cited: 0 3rd International Conference on Quantum Dots (QD 2004) MAY 10-13, 2004 Max Bell Bldg Banff Ctr, Banff, CANADA",

year = "2005",

month = feb,

doi = "10.1016/j.physe.2004.08.037",

language = "English",

volume = "26",

pages = "124--128",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

publisher = "Elsevier BV",

number = "1-4",

}

TY - JOUR

T1 - Influence of in composition on the photoluminescence emission of In(Ga)As quantum dot bilayers

AU - Migliorato, M. A.

AU - Steer, M. J.

AU - Soong, W. M.

AU - Tey, C. M.

AU - Liu, H. Y.

AU - Liew, S. L.

AU - Navaretti, P.

AU - Norris, D. J.

AU - Cullis, A. G.

AU - Hopkinson, M.

N1 - Times Cited: 0 3rd International Conference on Quantum Dots (QD 2004) MAY 10-13, 2004 Max Bell Bldg Banff Ctr, Banff, CANADA

PY - 2005/2

Y1 - 2005/2

N2 - We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. Use of a kinetic segregation model has shown that a reduction of the In composition for the upper layer of a bilayer structure can be used to compensate for the excess In that exists on the surface prior to growth. Three samples have been grown with upper dot In compositions varying from 90% to 100% and have been investigated by means of optical spectroscopy and electron microscopy. © 2004 Elsevier B.V. All rights reserved.

AB - We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. Use of a kinetic segregation model has shown that a reduction of the In composition for the upper layer of a bilayer structure can be used to compensate for the excess In that exists on the surface prior to growth. Three samples have been grown with upper dot In compositions varying from 90% to 100% and have been investigated by means of optical spectroscopy and electron microscopy. © 2004 Elsevier B.V. All rights reserved.

KW - Molecular beam epitaxy

KW - Quantum dots

KW - Spectroscopy

U2 - 10.1016/j.physe.2004.08.037

DO - 10.1016/j.physe.2004.08.037

M3 - Article

VL - 26

SP - 124

EP - 128

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

Influence of in composition on the photoluminescence emission of In(Ga)As quantum dot bilayers

Abstract

Keywords

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