Influence of processing conditions on the stability of poly(3- hexylthiophene)-based field-effect transistors

L.A. Majewski; J.W. Kingsley; C. Balocco; A.M. Song

doi:10.1063/1.2208938

Influence of processing conditions on the stability of poly(3- hexylthiophene)-based field-effect transistors

L.A. Majewski, J.W. Kingsley, C. Balocco, A.M. Song

Research output: Contribution to journal › Article › peer-review

Abstract

Bottom-contact organic field-effect transistors (OFETs) based on poly(3-hexylthiophene)-2,5-diyl were fabricated under different process conditions. The devices displayed drastic differences in their ambient-air stability. Whereas it took only about 10min in air for the off current to increase by one order of magnitude in OFETs prepared with chloroform and hexamethyldisilazane, a 120min exposure to air caused only a slight degradation of OFETs prepared using 1,2,4-trichlorobenzene, n-octadecyltrichlorosilane, and a heat treatment. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed.

Original language	Undefined
Article number	222108
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2208938
Publication status	Published - 2006

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abstract = "Bottom-contact organic field-effect transistors (OFETs) based on poly(3-hexylthiophene)-2,5-diyl were fabricated under different process conditions. The devices displayed drastic differences in their ambient-air stability. Whereas it took only about 10min in air for the off current to increase by one order of magnitude in OFETs prepared with chloroform and hexamethyldisilazane, a 120min exposure to air caused only a slight degradation of OFETs prepared using 1,2,4-trichlorobenzene, n-octadecyltrichlorosilane, and a heat treatment. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed.",

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AU - Song, A.M.

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AB - Bottom-contact organic field-effect transistors (OFETs) based on poly(3-hexylthiophene)-2,5-diyl were fabricated under different process conditions. The devices displayed drastic differences in their ambient-air stability. Whereas it took only about 10min in air for the off current to increase by one order of magnitude in OFETs prepared with chloroform and hexamethyldisilazane, a 120min exposure to air caused only a slight degradation of OFETs prepared using 1,2,4-trichlorobenzene, n-octadecyltrichlorosilane, and a heat treatment. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed.

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Influence of processing conditions on the stability of poly(3- hexylthiophene)-based field-effect transistors

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