Influence of processing conditions on the stability of poly(3- hexylthiophene)-based field-effect transistors

L.A. Majewski, J.W. Kingsley, C. Balocco, A.M. Song

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Bottom-contact organic field-effect transistors (OFETs) based on poly(3-hexylthiophene)-2,5-diyl were fabricated under different process conditions. The devices displayed drastic differences in their ambient-air stability. Whereas it took only about 10min in air for the off current to increase by one order of magnitude in OFETs prepared with chloroform and hexamethyldisilazane, a 120min exposure to air caused only a slight degradation of OFETs prepared using 1,2,4-trichlorobenzene, n-octadecyltrichlorosilane, and a heat treatment. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed.
Original languageUndefined
Article number222108
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2006

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