Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes

Sabine Blatt; Frank Hennrich; Hilbert V. Löhneysen; Manfred M. Kappes; Aravind Vijayaraghavan; Ralph Krupke

doi:10.1021/nl0706751

Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes

Sabine Blatt, Frank Hennrich, Hilbert V. Löhneysen, Manfred M. Kappes, Aravind Vijayaraghavan, Ralph Krupke

Research output: Contribution to journal › Article › peer-review

Abstract

We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies. © 2007 American Chemical Society.

Original language	English
Pages (from-to)	1960-1966
Number of pages	6
Journal	Nano Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1021/nl0706751
Publication status	Published - Jul 2007

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title = "Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes",

abstract = "We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies. {\textcopyright} 2007 American Chemical Society.",

author = "Sabine Blatt and Frank Hennrich and {V. L{\"o}hneysen}, Hilbert and Kappes, {Manfred M.} and Aravind Vijayaraghavan and Ralph Krupke",

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T1 - Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes

AU - Blatt, Sabine

AU - Hennrich, Frank

AU - V. Löhneysen, Hilbert

AU - Kappes, Manfred M.

AU - Vijayaraghavan, Aravind

AU - Krupke, Ralph

N1 - Blatt, Sabine Hennrich, Frank von Loehneysen, Hilbert Kappes, Manfred M. Vijayaraghavan, Aravind Krupke, Ralph

PY - 2007/7

Y1 - 2007/7

N2 - We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies. © 2007 American Chemical Society.

AB - We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies. © 2007 American Chemical Society.

U2 - 10.1021/nl0706751

DO - 10.1021/nl0706751

M3 - Article

SN - 1530-6984

VL - 7

SP - 1960

EP - 1966

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes

Abstract

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