Infrared photoreflectance of InAs

C. H. Lin; K. E. Singer; J. H. Evans-Freeman; K. Heath; M. Missous

doi:10.1088/0268-1242/12/12/013

Infrared photoreflectance of InAs

C. H. Lin^*, K. E. Singer, J. H. Evans-Freeman, K. Heath, M. Missous

^*Corresponding author for this work

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Abstract

Photoreflectance (PR) has been used for the first time for the measurement of the fundamental energy gaps of a narrow gap semiconductor (InAs) and demonstrated to be capable of determining both the bandgap and the spin-orbit split-off energy. The measurements reported in this paper give a value for the spin split-off energy for p-type InAs as 367 ±2 meV. The assignment of the feature to the spin split-off band is supported by the observation that this value is found to be independent of temperature.

Original language	English
Pages (from-to)	1619-1624
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	12
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/12/12/013
Publication status	Published - 1 Dec 1997

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title = "Infrared photoreflectance of InAs",

abstract = "Photoreflectance (PR) has been used for the first time for the measurement of the fundamental energy gaps of a narrow gap semiconductor (InAs) and demonstrated to be capable of determining both the bandgap and the spin-orbit split-off energy. The measurements reported in this paper give a value for the spin split-off energy for p-type InAs as 367 ±2 meV. The assignment of the feature to the spin split-off band is supported by the observation that this value is found to be independent of temperature.",

author = "Lin, \{C. H.\} and Singer, \{K. E.\} and Evans-Freeman, \{J. H.\} and K. Heath and M. Missous",

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T1 - Infrared photoreflectance of InAs

AU - Lin, C. H.

AU - Singer, K. E.

AU - Evans-Freeman, J. H.

AU - Heath, K.

AU - Missous, M.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Photoreflectance (PR) has been used for the first time for the measurement of the fundamental energy gaps of a narrow gap semiconductor (InAs) and demonstrated to be capable of determining both the bandgap and the spin-orbit split-off energy. The measurements reported in this paper give a value for the spin split-off energy for p-type InAs as 367 ±2 meV. The assignment of the feature to the spin split-off band is supported by the observation that this value is found to be independent of temperature.

AB - Photoreflectance (PR) has been used for the first time for the measurement of the fundamental energy gaps of a narrow gap semiconductor (InAs) and demonstrated to be capable of determining both the bandgap and the spin-orbit split-off energy. The measurements reported in this paper give a value for the spin split-off energy for p-type InAs as 367 ±2 meV. The assignment of the feature to the spin split-off band is supported by the observation that this value is found to be independent of temperature.

UR - https://www.scopus.com/pages/publications/0039746442

U2 - 10.1088/0268-1242/12/12/013

DO - 10.1088/0268-1242/12/12/013

M3 - Article

AN - SCOPUS:0039746442

SN - 0268-1242

VL - 12

SP - 1619

EP - 1624

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

ER -

Infrared photoreflectance of InAs

Abstract

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