Abstract
Infrared specular reflectance spectra of Sn1-xSb xO2 ceramics have been measured over a range of bulk doping levels extending up to x=0.03. At low doping levels conduction electrons screen out coupling of the infrared radiation to bulk phonon modes in a way expected from a model in which reflectivity is calculated from the bulk dielectric function. However, at higher doping levels a reflectivity minimum develops at ca. 800 cm-1. This is interpreted in terms of a model where a surface layer with low carrier concentration sits on top of an undepleted bulk.
Original language | English |
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Pages (from-to) | 451-455 |
Number of pages | 4 |
Journal | Journal of Materials Chemistry |
Volume | 1 |
Issue number | 3 |
Publication status | Published - 1991 |
Keywords
- Antimony-doped tin oxide ceramic
- Depletion layer
- Infrared reflection spectroscopy