InGaAs Self-Switching Diode Based THz Bridge Rectifier

Sahil Garg; Bipan Kaushal; S R Kasjoo; Sanjeev Kumar; Neena Gupta; Aimin Song; Arun K Singh

doi:10.1088/1361-6641/abffe0

InGaAs Self-Switching Diode Based THz Bridge Rectifier

Sahil Garg, Bipan Kaushal, S R Kasjoo, Sanjeev Kumar, Neena Gupta, Aimin Song, Arun K Singh

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Abstract

Here, an In0.53Ga0.47As based self-switching diode bridge rectifier (SSDBR) is presented utilizing Silvaco TCAD computer simulations. The zero-bias self-switching diode exhibiting nonlinear current-voltage (I-V) characteristics has been utilized for the device design. The output current, threshold voltage and maximum frequency of operation for the device can be easily tuned by adjusting the channel width and length of SSD than that of conventional rectifiers which are typically material dependent. AC and DC Characteristics of the SSDBR have been presented demonstrating full wave rectification up to the frequencies of 0.240 THz with a noise equivalent power (NEP) of 39.90 pW/Hz1/2. Furthermore, simulated results are validated by developing an analytical model for InGaAs based SSDBR.

Original language	English
Journal	Semiconductor Science and Technology
Early online date	16 Jun 2021
DOIs	https://doi.org/10.1088/1361-6641/abffe0
Publication status	E-pub ahead of print - 16 Jun 2021

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10.1088/1361-6641/abffe0

IOP accepted SST-107581.R1_Proof_hiAccepted author manuscript, 1.21 MBLicence: CC BY

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title = "InGaAs Self-Switching Diode Based THz Bridge Rectifier",

abstract = "Here, an In0.53Ga0.47As based self-switching diode bridge rectifier (SSDBR) is presented utilizing Silvaco TCAD computer simulations. The zero-bias self-switching diode exhibiting nonlinear current-voltage (I-V) characteristics has been utilized for the device design. The output current, threshold voltage and maximum frequency of operation for the device can be easily tuned by adjusting the channel width and length of SSD than that of conventional rectifiers which are typically material dependent. AC and DC Characteristics of the SSDBR have been presented demonstrating full wave rectification up to the frequencies of 0.240 THz with a noise equivalent power (NEP) of 39.90 pW/Hz1/2. Furthermore, simulated results are validated by developing an analytical model for InGaAs based SSDBR.",

author = "Sahil Garg and Bipan Kaushal and Kasjoo, {S R} and Sanjeev Kumar and Neena Gupta and Aimin Song and Singh, {Arun K}",

year = "2021",

month = jun,

day = "16",

doi = "10.1088/1361-6641/abffe0",

language = "English",

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TY - JOUR

T1 - InGaAs Self-Switching Diode Based THz Bridge Rectifier

AU - Garg, Sahil

AU - Kaushal, Bipan

AU - Kasjoo, S R

AU - Kumar, Sanjeev

AU - Gupta, Neena

AU - Song, Aimin

AU - Singh, Arun K

PY - 2021/6/16

Y1 - 2021/6/16

N2 - Here, an In0.53Ga0.47As based self-switching diode bridge rectifier (SSDBR) is presented utilizing Silvaco TCAD computer simulations. The zero-bias self-switching diode exhibiting nonlinear current-voltage (I-V) characteristics has been utilized for the device design. The output current, threshold voltage and maximum frequency of operation for the device can be easily tuned by adjusting the channel width and length of SSD than that of conventional rectifiers which are typically material dependent. AC and DC Characteristics of the SSDBR have been presented demonstrating full wave rectification up to the frequencies of 0.240 THz with a noise equivalent power (NEP) of 39.90 pW/Hz1/2. Furthermore, simulated results are validated by developing an analytical model for InGaAs based SSDBR.

AB - Here, an In0.53Ga0.47As based self-switching diode bridge rectifier (SSDBR) is presented utilizing Silvaco TCAD computer simulations. The zero-bias self-switching diode exhibiting nonlinear current-voltage (I-V) characteristics has been utilized for the device design. The output current, threshold voltage and maximum frequency of operation for the device can be easily tuned by adjusting the channel width and length of SSD than that of conventional rectifiers which are typically material dependent. AC and DC Characteristics of the SSDBR have been presented demonstrating full wave rectification up to the frequencies of 0.240 THz with a noise equivalent power (NEP) of 39.90 pW/Hz1/2. Furthermore, simulated results are validated by developing an analytical model for InGaAs based SSDBR.

UR - https://doi.org/10.1088/1361-6641/abffe0

U2 - 10.1088/1361-6641/abffe0

DO - 10.1088/1361-6641/abffe0

M3 - Article

SN - 0268-1242

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -

InGaAs Self-Switching Diode Based THz Bridge Rectifier

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