InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation

Saad Muttlak, Omar Abdulwahid, James Sexton, Michael Kelly, Mohamed Missous

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	254-262
Number of pages	8
Journal	IEEE Journal of the Electron Devices Society
Early online date	2 Feb 2018
DOIs	https://doi.org/10.1109/JEDS.2018.2797951
Publication status	Published - 2018

Access to Document

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title = "InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation",

author = "Saad Muttlak and Omar Abdulwahid and James Sexton and Michael Kelly and Mohamed Missous",

year = "2018",

doi = "10.1109/JEDS.2018.2797951",

language = "English",

pages = "254--262",

journal = "IEEE Journal of the Electron Devices Society ",

issn = "2168-6734",

publisher = "IEEE",

}

TY - JOUR

T1 - InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation

AU - Muttlak, Saad

AU - Abdulwahid, Omar

AU - Sexton, James

AU - Kelly, Michael

AU - Missous, Mohamed

PY - 2018

Y1 - 2018

U2 - 10.1109/JEDS.2018.2797951

DO - 10.1109/JEDS.2018.2797951

M3 - Article

SN - 2168-6734

SP - 254

EP - 262

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -