@inproceedings{d92ef2d0e66940a39918c791aa5ffbfb,
title = "InGaAs/AlAs Resonant Tunneling Diodes with Very High Negative Differential Conductance for Efficient and Cost-Effective mm-Wave/THz Sources",
abstract = "The work reported here demonstrates double barrier InGaAs/AlAs resonant tunneling diodes with both high current density and negative differential conductance features. The simplicity of the device epitaxial structures exploited in this work (avoiding graded or/and quaternary layers) makes it attractive for manufacturing. An extracted negative differential conductance of 95 mS/ μm2 was deduced for RTD sample #327. This device had a high current density of 10.8mA/μm2 while still maintaining an excellent PVCR of 5, one of the highest ever reported for such a high current density making the diode suitable for low-cost mm-wave/THz regime applications. These prominent features boost the estimated intrinsic cut-off frequency of the device beyond 2THz for a relatively large mesa size of 2 μm2",
keywords = "mm-wave/THz applications, negative differential conductance, resonant tunneling diodes",
author = "Muttlak, {Saad G.} and Omar Abdulwahid and J. Sexton and M. Missous",
year = "2019",
month = aug,
doi = "10.1109/UCMMT47867.2019.9008338",
language = "English",
series = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019",
publisher = "IEEE",
booktitle = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019",
address = "United States",
note = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019 ; Conference date: 20-08-2019 Through 22-08-2019",
}