InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorous source

Mohamed Missous; Azlan Abdul Aziz; Adarsh Sandhu

InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorous source

Mohamed Missous^*, Azlan Abdul Aziz, Adarsh Sandhu

^*Corresponding author for this work

UMIST

Research output: Contribution to journal › Article › peer-review

Abstract

GaP/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) structures were grown on 3-inch GaAs (100) substrates by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source. The inclusion of a 5 nm thick AlGaAs layer between the InGaP and InGaAs yielded the best electrical characteristics, where the room temperature mobility and sheet carrier concentration were 5200 cm²/V·s and 1.8×10¹² cm^-2 respectively. A 5×100 μm² HEMT device fabricated using this structure yielded an extrinsic transconductance of 80 mS/mm.

Original language	English
Pages (from-to)	L647-L649
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	Part 2 : 6 A
Publication status	Published - 1 Jun 1997

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@article{f8b7920aac6c4200a9d7fcb04b83c942,

title = "InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorous source",

abstract = "GaP/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) structures were grown on 3-inch GaAs (100) substrates by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source. The inclusion of a 5 nm thick AlGaAs layer between the InGaP and InGaAs yielded the best electrical characteristics, where the room temperature mobility and sheet carrier concentration were 5200 cm2/V·s and 1.8×1012 cm-2 respectively. A 5×100 μm2 HEMT device fabricated using this structure yielded an extrinsic transconductance of 80 mS/mm.",

author = "Mohamed Missous and Aziz, {Azlan Abdul} and Adarsh Sandhu",

year = "1997",

month = jun,

day = "1",

language = "English",

volume = "36",

pages = "L647--L649",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "Part 2 : 6 A",

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InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorous source. / Missous, Mohamed; Aziz, Azlan Abdul; Sandhu, Adarsh.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. Part 2 : 6 A, 01.06.1997, p. L647-L649.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorous source

AU - Missous, Mohamed

AU - Aziz, Azlan Abdul

AU - Sandhu, Adarsh

PY - 1997/6/1

Y1 - 1997/6/1

N2 - GaP/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) structures were grown on 3-inch GaAs (100) substrates by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source. The inclusion of a 5 nm thick AlGaAs layer between the InGaP and InGaAs yielded the best electrical characteristics, where the room temperature mobility and sheet carrier concentration were 5200 cm2/V·s and 1.8×1012 cm-2 respectively. A 5×100 μm2 HEMT device fabricated using this structure yielded an extrinsic transconductance of 80 mS/mm.

AB - GaP/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) structures were grown on 3-inch GaAs (100) substrates by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source. The inclusion of a 5 nm thick AlGaAs layer between the InGaP and InGaAs yielded the best electrical characteristics, where the room temperature mobility and sheet carrier concentration were 5200 cm2/V·s and 1.8×1012 cm-2 respectively. A 5×100 μm2 HEMT device fabricated using this structure yielded an extrinsic transconductance of 80 mS/mm.

UR - http://www.scopus.com/inward/record.url?scp=0031169285&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031169285

SN - 0021-4922

VL - 36

SP - L647-L649

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - Part 2 : 6 A

ER -

InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorous source

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