Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

Gabriele Calabrese; Lorenzo  Pimpolari; Silvia Conti; Fabrice Mavier; Subimal Majee; Robyn Worsley; Zihao Wang; Francesco  Pieri; Giovanni  Basso; Giovanni  Pennelli; Khaled Parvez; David Brooks; Massimo  Macucci; Giuseppe Iannaccone; Konstantin Novoselov; Cinzia Casiraghi; Gianluca Fiori

doi:10.1039/C9NR09289G

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

Gabriele Calabrese, Lorenzo Pimpolari, Silvia Conti, Fabrice Mavier, Subimal Majee, Robyn Worsley, Zihao Wang, Francesco Pieri, Giovanni Basso, Giovanni Pennelli , Khaled Parvez, David Brooks, Massimo Macucci , Giuseppe Iannaccone, Konstantin Novoselov, Cinzia Casiraghi, Gianluca Fiori

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Abstract

We report room temperature Hall mobility measurements, low temperature
magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO2/Si substrates. We found that thermal annealing in vacuum at 450 C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 W/sq after annealing, and are n-type doped, with carrier concentrations in the low 1020 cm􀀀3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm2 V􀀀1 s􀀀1 for a 480 nm-thick film printed on SiO2/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1 – 1. These results represent the
first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.

Original language	English
Journal	Nanoscale
Early online date	18 Mar 2020
DOIs	https://doi.org/10.1039/C9NR09289G
Publication status	Published - 2020

Research Beacons, Institutes and Platforms

National Graphene Institute

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10.1039/C9NR09289G

nanoscale main articleAccepted author manuscript, 3.82 MB

Graphene Flagship Core 2 (Division of Pharmacy and Optometry allocation).
Kostarelos, K. (PI) & Bussy, C. (CoI)
1/04/18 → 31/03/20
Project: Research

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title = "Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization",

abstract = "We report room temperature Hall mobility measurements, low temperaturemagnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO2/Si substrates. We found that thermal annealing in vacuum at 450 C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 W/sq after annealing, and are n-type doped, with carrier concentrations in the low 1020 cm􀀀3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm2 V􀀀1 s􀀀1 for a 480 nm-thick film printed on SiO2/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1 – 1. These results represent thefirst in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.",

author = "Gabriele Calabrese and Lorenzo Pimpolari and Silvia Conti and Fabrice Mavier and Subimal Majee and Robyn Worsley and Zihao Wang and Francesco Pieri and Giovanni Basso and Giovanni Pennelli and Khaled Parvez and David Brooks and Massimo Macucci and Giuseppe Iannaccone and Konstantin Novoselov and Cinzia Casiraghi and Gianluca Fiori",

year = "2020",

doi = "10.1039/C9NR09289G",

language = "English",

journal = "Nanoscale",

issn = "2040-3372",

publisher = "Royal Society of Chemistry",

}

TY - JOUR

T1 - Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

AU - Calabrese, Gabriele

AU - Pimpolari, Lorenzo

AU - Conti, Silvia

AU - Mavier, Fabrice

AU - Majee, Subimal

AU - Worsley, Robyn

AU - Wang, Zihao

AU - Pieri, Francesco

AU - Basso, Giovanni

AU - Pennelli , Giovanni

AU - Parvez, Khaled

AU - Brooks, David

AU - Macucci , Massimo

AU - Iannaccone, Giuseppe

AU - Novoselov, Konstantin

AU - Casiraghi, Cinzia

AU - Fiori, Gianluca

PY - 2020

Y1 - 2020

N2 - We report room temperature Hall mobility measurements, low temperaturemagnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO2/Si substrates. We found that thermal annealing in vacuum at 450 C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 W/sq after annealing, and are n-type doped, with carrier concentrations in the low 1020 cm􀀀3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm2 V􀀀1 s􀀀1 for a 480 nm-thick film printed on SiO2/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1 – 1. These results represent thefirst in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.

AB - We report room temperature Hall mobility measurements, low temperaturemagnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO2/Si substrates. We found that thermal annealing in vacuum at 450 C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 W/sq after annealing, and are n-type doped, with carrier concentrations in the low 1020 cm􀀀3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm2 V􀀀1 s􀀀1 for a 480 nm-thick film printed on SiO2/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1 – 1. These results represent thefirst in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.

U2 - 10.1039/C9NR09289G

DO - 10.1039/C9NR09289G

M3 - Article

SN - 2040-3372

JO - Nanoscale

JF - Nanoscale

ER -

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

Abstract

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Graphene Flagship Core 2 (Division of Pharmacy and Optometry allocation).

Cite this