Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

Maëlis Piquemal-banci; Regina Galceran; Florian Godel; Sabina Caneva; Marie-blandine Martin; Robert S. Weatherup; Piran R. Kidambi; Karim Bouzehouane; Stephane Xavier; Abdelmadjid Anane; Frédéric Petroff; Albert Fert; Simon Mutien-marie Dubois; Jean-christophe Charlier; John Robertson; Stephan Hofmann; Bruno Dlubak; Pierre Seneor

doi:10.1021/acsnano.8b01354

Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

Maëlis Piquemal-banci, Regina Galceran, Florian Godel, Sabina Caneva, Marie-blandine Martin, Robert S. Weatherup, Piran R. Kidambi, Karim Bouzehouane, Stephane Xavier, Abdelmadjid Anane, Frédéric Petroff, Albert Fert, Simon Mutien-marie Dubois, Jean-christophe Charlier, John Robertson, Stephan Hofmann, Bruno Dlubak, Pierre Seneor

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.

Original language	English
Journal	ACS Nano
Early online date	26 Apr 2018
DOIs	https://doi.org/10.1021/acsnano.8b01354
Publication status	Published - 2018

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10.1021/acsnano.8b01354

UoMaH: The University of Manchester at Harwell
Lawrence, J. (PI), Burnett, T. (PI), Baker, M. (Researcher), Eastwood, D. (Researcher), Falkowska, M. (Researcher), Freitas, D. (Researcher), Hunt, S. (Researcher), Khan, A. (Researcher), Lane, H. (Researcher), Lezcano Gonzalez, I. (Researcher), Ma, L. (Researcher), Mirihanage, W. (Researcher), Parlett, C. (Researcher), Xu, S. (Researcher), Yan, K. (Researcher), Reinhard, C. (Support team), Duggins, D. (Technical team), Lewis-Fell, J. (Technical team), Nonni, S. (Technical team), Rollings, B. (Technical team), Sinclair, L. (Technical team) & Batts, S. (Support team)
1/01/18 → …
Project: Other

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Piquemal-banci, M., Galceran, R., Godel, F., Caneva, S., Martin, M., Weatherup, R. S., Kidambi, P. R., Bouzehouane, K., Xavier, S., Anane, A., Petroff, F., Fert, A., Dubois, S. M., Charlier, J., Robertson, J., Hofmann, S., Dlubak, B., & Seneor, P. (2018). Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride. ACS Nano. https://doi.org/10.1021/acsnano.8b01354

@article{dab40c0be89a4040b7850961fd7ed668,

title = "Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride",

abstract = "We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.",

author = "Ma{\"e}lis Piquemal-banci and Regina Galceran and Florian Godel and Sabina Caneva and Marie-blandine Martin and Weatherup, {Robert S.} and Kidambi, {Piran R.} and Karim Bouzehouane and Stephane Xavier and Abdelmadjid Anane and Fr{\'e}d{\'e}ric Petroff and Albert Fert and Dubois, {Simon Mutien-marie} and Jean-christophe Charlier and John Robertson and Stephan Hofmann and Bruno Dlubak and Pierre Seneor",

year = "2018",

doi = "10.1021/acsnano.8b01354",

language = "English",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

}

Piquemal-banci, M, Galceran, R, Godel, F, Caneva, S, Martin, M, Weatherup, RS, Kidambi, PR, Bouzehouane, K, Xavier, S, Anane, A, Petroff, F, Fert, A, Dubois, SM, Charlier, J, Robertson, J, Hofmann, S, Dlubak, B & Seneor, P 2018, 'Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride', ACS Nano. https://doi.org/10.1021/acsnano.8b01354

TY - JOUR

T1 - Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

AU - Piquemal-banci, Maëlis

AU - Galceran, Regina

AU - Godel, Florian

AU - Caneva, Sabina

AU - Martin, Marie-blandine

AU - Weatherup, Robert S.

AU - Kidambi, Piran R.

AU - Bouzehouane, Karim

AU - Xavier, Stephane

AU - Anane, Abdelmadjid

AU - Petroff, Frédéric

AU - Fert, Albert

AU - Dubois, Simon Mutien-marie

AU - Charlier, Jean-christophe

AU - Robertson, John

AU - Hofmann, Stephan

AU - Dlubak, Bruno

AU - Seneor, Pierre

PY - 2018

Y1 - 2018

N2 - We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.

AB - We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.

U2 - 10.1021/acsnano.8b01354

DO - 10.1021/acsnano.8b01354

M3 - Article

SN - 1936-0851

JO - ACS Nano

JF - ACS Nano

ER -

Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

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UoMaH: The University of Manchester at Harwell

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