Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

V. P. Markevich; A. R. Peaker; A. V. Markevich; V. V. Litvinov; L. I. Murin; V. V. Emtsev

doi:10.1016/j.mssp.2006.08.068

Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

V. P. Markevich^*, A. R. Peaker, A. V. Markevich, V. V. Litvinov, L. I. Murin, V. V. Emtsev

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Electrically active defects induced by irradiation with MeV electrons in oxygen-rich n-type Ge crystals have been studied by means of capacitance transient techniques. Transformation of the defects upon post-irradiation isochronal and isothermal anneals has also been investigated. It is argued that radiation-induced defects with energy levels at 62 (E62) and 80 meV (E80) below the conduction band edge are associated with complexes of Ge self-interstitials with oxygen-related defects. These complexes are formed upon annealing of electron-irradiated samples at T>50 °C and anneal out at temperatures higher than 140 °C. The activation energy of formation of the dominant E62 defect has been found to be 0.80 eV.

Original language	English
Pages (from-to)	613-618
Number of pages	6
Journal	Materials science in semiconductor processing
Volume	9
Issue number	4-5
DOIs	https://doi.org/10.1016/j.mssp.2006.08.068
Publication status	Published - Aug 2006

Keywords

Germanium
Interstitial
Irradiation
Oxygen defects

Research Beacons, Institutes and Platforms

Photon Science Institute

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10.1016/j.mssp.2006.08.068

Cite this

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title = "Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals",

abstract = "Electrically active defects induced by irradiation with MeV electrons in oxygen-rich n-type Ge crystals have been studied by means of capacitance transient techniques. Transformation of the defects upon post-irradiation isochronal and isothermal anneals has also been investigated. It is argued that radiation-induced defects with energy levels at 62 (E62) and 80 meV (E80) below the conduction band edge are associated with complexes of Ge self-interstitials with oxygen-related defects. These complexes are formed upon annealing of electron-irradiated samples at T>50 °C and anneal out at temperatures higher than 140 °C. The activation energy of formation of the dominant E62 defect has been found to be 0.80 eV.",

keywords = "Germanium, Interstitial, Irradiation, Oxygen defects",

author = "Markevich, {V. P.} and Peaker, {A. R.} and Markevich, {A. V.} and Litvinov, {V. V.} and Murin, {L. I.} and Emtsev, {V. V.}",

year = "2006",

month = aug,

doi = "10.1016/j.mssp.2006.08.068",

language = "English",

volume = "9",

pages = "613--618",

journal = "Materials science in semiconductor processing",

issn = "1369-8001",

publisher = "Elsevier BV",

number = "4-5",

}

TY - JOUR

T1 - Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Markevich, A. V.

AU - Litvinov, V. V.

AU - Murin, L. I.

AU - Emtsev, V. V.

PY - 2006/8

Y1 - 2006/8

N2 - Electrically active defects induced by irradiation with MeV electrons in oxygen-rich n-type Ge crystals have been studied by means of capacitance transient techniques. Transformation of the defects upon post-irradiation isochronal and isothermal anneals has also been investigated. It is argued that radiation-induced defects with energy levels at 62 (E62) and 80 meV (E80) below the conduction band edge are associated with complexes of Ge self-interstitials with oxygen-related defects. These complexes are formed upon annealing of electron-irradiated samples at T>50 °C and anneal out at temperatures higher than 140 °C. The activation energy of formation of the dominant E62 defect has been found to be 0.80 eV.

AB - Electrically active defects induced by irradiation with MeV electrons in oxygen-rich n-type Ge crystals have been studied by means of capacitance transient techniques. Transformation of the defects upon post-irradiation isochronal and isothermal anneals has also been investigated. It is argued that radiation-induced defects with energy levels at 62 (E62) and 80 meV (E80) below the conduction band edge are associated with complexes of Ge self-interstitials with oxygen-related defects. These complexes are formed upon annealing of electron-irradiated samples at T>50 °C and anneal out at temperatures higher than 140 °C. The activation energy of formation of the dominant E62 defect has been found to be 0.80 eV.

KW - Germanium

KW - Interstitial

KW - Irradiation

KW - Oxygen defects

UR - http://www.scopus.com/inward/record.url?scp=33845296492&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2006.08.068

DO - 10.1016/j.mssp.2006.08.068

M3 - Article

AN - SCOPUS:33845296492

SN - 1369-8001

VL - 9

SP - 613

EP - 618

JO - Materials science in semiconductor processing

JF - Materials science in semiconductor processing

IS - 4-5

ER -

Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

Abstract

Keywords

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