Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

V. P. Markevich, A. R. Peaker, A. V. Markevich, V. V. Litvinov, L. I. Murin, V. V. Emtsev

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Electrically active defects induced by irradiation with MeV electrons in oxygen-rich n-type Ge crystals have been studied by means of capacitance transient techniques. Transformation of the defects upon post-irradiation isochronal and isothermal anneals has also been investigated. It is argued that radiation-induced defects with energy levels at 62 (E62) and 80 meV (E80) below the conduction band edge are associated with complexes of Ge self-interstitials with oxygen-related defects. These complexes are formed upon annealing of electron-irradiated samples at T>50 °C and anneal out at temperatures higher than 140 °C. The activation energy of formation of the dominant E62 defect has been found to be 0.80 eV.
    Original languageEnglish
    Pages (from-to)613-618
    Number of pages6
    JournalMaterials science in semiconductor processing
    Volume9
    Issue number4-5
    DOIs
    Publication statusPublished - Aug 2006

    Keywords

    • Germanium
    • Interstitial
    • Irradiation
    • Oxygen defects

    Research Beacons, Institutes and Platforms

    • Photon Science Institute

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