Interactions of Cu and Ni impurities with vacancy-related point defects in Czochralski-grown Si crystals

V. P. Markevich; A. R. Peaker; I. F. Medvedeva; V. E. Gusakov; L. I. Murin; B. G. Svensson

doi:10.1149/1.3096565

Interactions of Cu and Ni impurities with vacancy-related point defects in Czochralski-grown Si crystals

V. P. Markevich, A. R. Peaker, I. F. Medvedeva, V. E. Gusakov, L. I. Murin, B. G. Svensson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

It has been inferred from DLTS measurements on electron-irradiated Si samples contaminated with copper and nickel that divacancies (V₂) and vacancy-oxygen complexes (VO) are effective traps for mobile Cu and Ni interstitial atoms. Interactions of these impurities with VO and V₂ result in the enhanced annealing out of the VO and V₂ defects as well as in the formation of new electrically active centers. An enhanced annealing of the VO and V₂ defects in Si:Cu crystals is accompanied by an appearance of electron traps with the energy levels at E_c - 0.60 eV and E_c - 0.17 eV. It is argued that these levels are related to acceptor levels of Cu-VO and Cu-V² complexes. The stable configuration of the Cu-VO complex has been determined by means of quantum-chemical calculations. In Si:Ni crystals an energy level at E _c - 0.365 eV is related to a complex incorporating at least one Ni atom and a radiation-induced defect.

Original language	English
Title of host publication	ECS Transactions
Pages	1013-1018
Number of pages	6
Volume	18
Edition	1 PART 2
DOIs	https://doi.org/10.1149/1.3096565
Publication status	Published - 2009
Event	ISTC/CSTIC 2009 (CISTC) - Shanghai, China Duration: 19 Mar 2009 → 20 Mar 2009

Conference

Conference	ISTC/CSTIC 2009 (CISTC)
Country/Territory	China
City	Shanghai
Period	19/03/09 → 20/03/09

Access to Document

10.1149/1.3096565

Cite this

@inproceedings{f278faa349b7454e87bae8b45bc7918a,

title = "Interactions of Cu and Ni impurities with vacancy-related point defects in Czochralski-grown Si crystals",

abstract = "It has been inferred from DLTS measurements on electron-irradiated Si samples contaminated with copper and nickel that divacancies (V2) and vacancy-oxygen complexes (VO) are effective traps for mobile Cu and Ni interstitial atoms. Interactions of these impurities with VO and V2 result in the enhanced annealing out of the VO and V2 defects as well as in the formation of new electrically active centers. An enhanced annealing of the VO and V2 defects in Si:Cu crystals is accompanied by an appearance of electron traps with the energy levels at Ec - 0.60 eV and Ec - 0.17 eV. It is argued that these levels are related to acceptor levels of Cu-VO and Cu-V2 complexes. The stable configuration of the Cu-VO complex has been determined by means of quantum-chemical calculations. In Si:Ni crystals an energy level at E c - 0.365 eV is related to a complex incorporating at least one Ni atom and a radiation-induced defect.",

author = "Markevich, {V. P.} and Peaker, {A. R.} and Medvedeva, {I. F.} and Gusakov, {V. E.} and Murin, {L. I.} and Svensson, {B. G.}",

year = "2009",

doi = "10.1149/1.3096565",

language = "English",

isbn = "9781615676460",

volume = "18",

pages = "1013--1018",

booktitle = "ECS Transactions",

edition = "1 PART 2",

note = "ISTC/CSTIC 2009 (CISTC) ; Conference date: 19-03-2009 Through 20-03-2009",

}

TY - GEN

T1 - Interactions of Cu and Ni impurities with vacancy-related point defects in Czochralski-grown Si crystals

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Medvedeva, I. F.

AU - Gusakov, V. E.

AU - Murin, L. I.

AU - Svensson, B. G.

PY - 2009

Y1 - 2009

N2 - It has been inferred from DLTS measurements on electron-irradiated Si samples contaminated with copper and nickel that divacancies (V2) and vacancy-oxygen complexes (VO) are effective traps for mobile Cu and Ni interstitial atoms. Interactions of these impurities with VO and V2 result in the enhanced annealing out of the VO and V2 defects as well as in the formation of new electrically active centers. An enhanced annealing of the VO and V2 defects in Si:Cu crystals is accompanied by an appearance of electron traps with the energy levels at Ec - 0.60 eV and Ec - 0.17 eV. It is argued that these levels are related to acceptor levels of Cu-VO and Cu-V2 complexes. The stable configuration of the Cu-VO complex has been determined by means of quantum-chemical calculations. In Si:Ni crystals an energy level at E c - 0.365 eV is related to a complex incorporating at least one Ni atom and a radiation-induced defect.

AB - It has been inferred from DLTS measurements on electron-irradiated Si samples contaminated with copper and nickel that divacancies (V2) and vacancy-oxygen complexes (VO) are effective traps for mobile Cu and Ni interstitial atoms. Interactions of these impurities with VO and V2 result in the enhanced annealing out of the VO and V2 defects as well as in the formation of new electrically active centers. An enhanced annealing of the VO and V2 defects in Si:Cu crystals is accompanied by an appearance of electron traps with the energy levels at Ec - 0.60 eV and Ec - 0.17 eV. It is argued that these levels are related to acceptor levels of Cu-VO and Cu-V2 complexes. The stable configuration of the Cu-VO complex has been determined by means of quantum-chemical calculations. In Si:Ni crystals an energy level at E c - 0.365 eV is related to a complex incorporating at least one Ni atom and a radiation-induced defect.

UR - http://www.scopus.com/inward/record.url?scp=77950678200&partnerID=8YFLogxK

U2 - 10.1149/1.3096565

DO - 10.1149/1.3096565

M3 - Conference contribution

AN - SCOPUS:77950678200

SN - 9781615676460

VL - 18

SP - 1013

EP - 1018

BT - ECS Transactions

T2 - ISTC/CSTIC 2009 (CISTC)

Y2 - 19 March 2009 through 20 March 2009

ER -

Interactions of Cu and Ni impurities with vacancy-related point defects in Czochralski-grown Si crystals

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this