Interface stability of magnetic tunnel barriers and electrodes

A. Lamperi, A. T G Pym, D. S. Eastwood, S. Cardoso, P. Wisniowski, P. P. Freitas, G. I R Anderson, C. H. Marrows, B. K. Tanner

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Grazing incidence X-ray scattering during in-situ annealing has been used to study the interface stability in MgO-based electrodes and barriers in magnetic tunnel junctions (MTJs). In MTJs based on Co 60Fe 20B 20/MgO, low temperature annealing at about 200°C can result in a drop in the tunnelling magnetoresistance (TMR). Specular reflectivity measurements show a change in fringe structure at high scattering vector, at the temperature at which the TMR drops. Also, a change in diffuse scatter relative to the specular scatter is observed. Annealing of [Co 60Fe 60B 20ZMgO] ×14 multilayers prepared by three different techniques shows no change in the specular Bragg peaks with no loss of Kiessig fringe structure on crystallization and no change in the diffuse scatter up to 200°C. We suggest that diffusion of Mn from the IrMn pinning layer, present in the MTJs but not in the multilayers, may be responsible for the differences in TMR behaviour. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
    Original languageEnglish
    Pages (from-to)2778-2784
    Number of pages6
    JournalPhysica Status Solidi (A) Applications and Materials Science
    Volume204
    Issue number8
    DOIs
    Publication statusPublished - Aug 2007

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