Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies

L. Khirunenko; Yu Pomozov; N. Tripachko; M. Sosnin; A. Duvanskii; L. I. Murin; J. L. Lindström; S. B. Lastovskii; L. F. Makarenko; V. P. Markevich; A. R. Peaker

doi:10.4028/3-908451-13-2.261

Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies

L. Khirunenko^*, Yu Pomozov, N. Tripachko, M. Sosnin, A. Duvanskii, L. I. Murin, J. L. Lindström, S. B. Lastovskii, L. F. Makarenko, V. P. Markevich, A. R. Peaker

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom C_i, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the C_iO_i complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm^-1. It has been found that the pair of bands at 910 and 942 cm ^-1 as well as another set of the bands at 812, 967.4 and 1086 cm ^-1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to C_iO_i. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) C_i atom to a stable C_iO_i defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of C_iO_i precursors with slightly lower activation energy for the hole emission as compare to that for the main C_iO_i state.

Original language	English
Title of host publication	Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
Publisher	Trans Tech Publications Ltd
Pages	261-266
Number of pages	6
ISBN (Print)	3908451132, 9783908451136
DOIs	https://doi.org/10.4028/3-908451-13-2.261
Publication status	Published - 1 Jan 2005
Event	11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, France Duration: 25 Sept 2005 → 30 Sept 2005

Publication series

Name	Solid State Phenomena
Volume	108-109
ISSN (Print)	1012-0394

Conference

Conference	11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005
Country/Territory	France
City	Giens
Period	25/09/05 → 30/09/05

Keywords

Annealing
Carbon impurity
DLTS
Infrared absorption
Irradiation
Silicon

Research Beacons, Institutes and Platforms

Photon Science Institute

Access to Document

10.4028/3-908451-13-2.261

Cite this

Khirunenko, L., Pomozov, Y., Tripachko, N., Sosnin, M., Duvanskii, A., Murin, L. I., Lindström, J. L., Lastovskii, S. B., Makarenko, L. F., Markevich, V. P., & Peaker, A. R. (2005). Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting (pp. 261-266). (Solid State Phenomena; Vol. 108-109). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-13-2.261

@inproceedings{e242afa4788d4025a011c7019adaf85a,

title = "Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies",

abstract = "The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm -1 as well as another set of the bands at 812, 967.4 and 1086 cm -1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.",

keywords = "Annealing, Carbon impurity, DLTS, Infrared absorption, Irradiation, Silicon",

author = "L. Khirunenko and Yu Pomozov and N. Tripachko and M. Sosnin and A. Duvanskii and Murin, {L. I.} and Lindstr{\"o}m, {J. L.} and Lastovskii, {S. B.} and Makarenko, {L. F.} and Markevich, {V. P.} and Peaker, {A. R.}",

year = "2005",

month = jan,

day = "1",

doi = "10.4028/3-908451-13-2.261",

language = "English",

isbn = "3908451132",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "261--266",

booktitle = "Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting",

address = "Switzerland",

note = "11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 ; Conference date: 25-09-2005 Through 30-09-2005",

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Khirunenko, L, Pomozov, Y, Tripachko, N, Sosnin, M, Duvanskii, A, Murin, LI, Lindström, JL, Lastovskii, SB, Makarenko, LF, Markevich, VP & Peaker, AR 2005, Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies. in Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Solid State Phenomena, vol. 108-109, Trans Tech Publications Ltd, pp. 261-266, 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, France, 25/09/05. https://doi.org/10.4028/3-908451-13-2.261

Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies. / Khirunenko, L.; Pomozov, Yu; Tripachko, N. et al.
Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. p. 261-266 (Solid State Phenomena; Vol. 108-109).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

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T1 - Interstitial carbon related defects in low-temperature irradiated Si

T2 - 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005

AU - Khirunenko, L.

AU - Pomozov, Yu

AU - Tripachko, N.

AU - Sosnin, M.

AU - Duvanskii, A.

AU - Murin, L. I.

AU - Lindström, J. L.

AU - Lastovskii, S. B.

AU - Makarenko, L. F.

AU - Markevich, V. P.

AU - Peaker, A. R.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm -1 as well as another set of the bands at 812, 967.4 and 1086 cm -1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

AB - The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm -1 as well as another set of the bands at 812, 967.4 and 1086 cm -1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

KW - Annealing

KW - Carbon impurity

KW - DLTS

KW - Infrared absorption

KW - Irradiation

KW - Silicon

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DO - 10.4028/3-908451-13-2.261

M3 - Conference contribution

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SN - 9783908451136

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BT - Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting

PB - Trans Tech Publications Ltd

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ER -

Khirunenko L, Pomozov Y, Tripachko N, Sosnin M, Duvanskii A, Murin LI et al. Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd. 2005. p. 261-266. (Solid State Phenomena). doi: 10.4028/3-908451-13-2.261

Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies

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Conference

Keywords

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