Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies

L. Khirunenko, Yu Pomozov, N. Tripachko, M. Sosnin, A. Duvanskii, L. I. Murin, J. L. Lindström, S. B. Lastovskii, L. F. Makarenko, V. P. Markevich, A. R. Peaker

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm -1 as well as another set of the bands at 812, 967.4 and 1086 cm -1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

    Original languageEnglish
    Title of host publicationGettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
    PublisherTrans Tech Publications Ltd
    Pages261-266
    Number of pages6
    ISBN (Print)3908451132, 9783908451136
    DOIs
    Publication statusPublished - 1 Jan 2005
    Event11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, France
    Duration: 25 Sept 200530 Sept 2005

    Publication series

    NameSolid State Phenomena
    Volume108-109
    ISSN (Print)1012-0394

    Conference

    Conference11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005
    Country/TerritoryFrance
    CityGiens
    Period25/09/0530/09/05

    Keywords

    • Annealing
    • Carbon impurity
    • DLTS
    • Infrared absorption
    • Irradiation
    • Silicon

    Research Beacons, Institutes and Platforms

    • Photon Science Institute

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