@inproceedings{c7305a2fe0d0451d91547370fdc21b9b,
title = "Intersubband absorption from 2-7 μm using strain-compensated double-barrier InGaAs multiquantum wells",
abstract = "We report observation of strong room temperature electron intersubband absorption in strain-compensated In0.84Ga0.16As/AlAs/ In0.52Al0.48As double barrier quantum wells grown on InP substrates. Multiple Γ-Γ intersubband transitions have been observed across a wide range of the mid infrared spectrum (2-7 μm) in three structures of differing InGaAs well width and therefore with a differing net strain. From the multiple Γ-Γ intersubband transitions observed in the 8 nm well, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range k ∼ 5 × 106 - 6 × 10 6 cm-1, the difference in subband parameters results in a spread in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.",
author = "Lai, {K. T.} and R. Gupta and M. Missous and Haywood, {S. K.}",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994510",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics",
pages = "1135--1136",
editor = "Jose Menendez and {Van de Walle}, {Chris G}",
booktitle = "Physics of Semiconductors",
address = "United States",
edition = "1",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}