Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wells

K. T. Lai; R. Gupta; M. Missous; S. K. Haywood

doi:10.1088/0268-1242/19/11/009

Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier In_xGa_1-xAs multiquantum wells

K. T. Lai^*, R. Gupta, M. Missous, S. K. Haywood

^*Corresponding author for this work

The University of Hull

Research output: Contribution to journal › Article › peer-review

Abstract

We report observations of strong room temperature intersubband absorption in strain-compensated In_0.84Ga_0.16As/AlAs/In _0.52Al_0.48As double-barrier quantum wells grown on InP substrates. Multiple Γ → Γ intersubband transitions have been observed across a wide range of the mid infrared spectrum (2-7μm) in three structures of differing InGaAs well width (30 Å, 45 Å and 80 Å) and therefore with differing net strain. This absorption range is not covered by direct-gap GaAs/AlGaAs structures.

Original language	English
Pages (from-to)	1263-1267
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	19
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/19/11/009
Publication status	Published - 1 Nov 2004

Access to Document

10.1088/0268-1242/19/11/009

Cite this

@article{7509be4e08784a46ac6b94d3493e9dfb,

title = "Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wells",

abstract = "We report observations of strong room temperature intersubband absorption in strain-compensated In0.84Ga0.16As/AlAs/In 0.52Al0.48As double-barrier quantum wells grown on InP substrates. Multiple Γ → Γ intersubband transitions have been observed across a wide range of the mid infrared spectrum (2-7μm) in three structures of differing InGaAs well width (30 {\AA}, 45 {\AA} and 80 {\AA}) and therefore with differing net strain. This absorption range is not covered by direct-gap GaAs/AlGaAs structures.",

author = "Lai, {K. T.} and R. Gupta and M. Missous and Haywood, {S. K.}",

year = "2004",

month = nov,

day = "1",

doi = "10.1088/0268-1242/19/11/009",

language = "English",

volume = "19",

pages = "1263--1267",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd",

number = "11",

}

TY - JOUR

T1 - Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wells

AU - Lai, K. T.

AU - Gupta, R.

AU - Missous, M.

AU - Haywood, S. K.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - We report observations of strong room temperature intersubband absorption in strain-compensated In0.84Ga0.16As/AlAs/In 0.52Al0.48As double-barrier quantum wells grown on InP substrates. Multiple Γ → Γ intersubband transitions have been observed across a wide range of the mid infrared spectrum (2-7μm) in three structures of differing InGaAs well width (30 Å, 45 Å and 80 Å) and therefore with differing net strain. This absorption range is not covered by direct-gap GaAs/AlGaAs structures.

AB - We report observations of strong room temperature intersubband absorption in strain-compensated In0.84Ga0.16As/AlAs/In 0.52Al0.48As double-barrier quantum wells grown on InP substrates. Multiple Γ → Γ intersubband transitions have been observed across a wide range of the mid infrared spectrum (2-7μm) in three structures of differing InGaAs well width (30 Å, 45 Å and 80 Å) and therefore with differing net strain. This absorption range is not covered by direct-gap GaAs/AlGaAs structures.

UR - http://www.scopus.com/inward/record.url?scp=9144221020&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/19/11/009

DO - 10.1088/0268-1242/19/11/009

M3 - Article

AN - SCOPUS:9144221020

SN - 0268-1242

VL - 19

SP - 1263

EP - 1267

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

ER -

Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier In_xGa_1-xAs multiquantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this