Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1-x)As (x ∼ 0.8) quantum wells grown on InP

K. T. Lai; M. Missous; R. Gupta; S. K. Haywood

doi:10.1063/1.1565688

Intersubband absorption in strain-compensated InAlAs/AlAs/In_xGa_(1-x)As (x ∼ 0.8) quantum wells grown on InP

K. T. Lai^*, M. Missous, R. Gupta, S. K. Haywood

^*Corresponding author for this work

The University of Hull

Research output: Contribution to journal › Article › peer-review

Abstract

The intersubband absorption in strain-compensated quantum wells grown on InP was studied. The room temperature absorption spectra showed several peaks which originated from intersubband transitions in the conduction band of the InGaAs well. It was found that the transition energies were in agreement with the theoretical model.

Original language	English
Pages (from-to)	6065-6067
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 1
DOIs	https://doi.org/10.1063/1.1565688
Publication status	Published - 15 May 2003

Access to Document

10.1063/1.1565688

Cite this

@article{d397ffad25744410a77c7e340e32e253,

title = "Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1-x)As (x ∼ 0.8) quantum wells grown on InP",

abstract = "The intersubband absorption in strain-compensated quantum wells grown on InP was studied. The room temperature absorption spectra showed several peaks which originated from intersubband transitions in the conduction band of the InGaAs well. It was found that the transition energies were in agreement with the theoretical model.",

author = "Lai, {K. T.} and M. Missous and R. Gupta and Haywood, {S. K.}",

year = "2003",

month = may,

day = "15",

doi = "10.1063/1.1565688",

language = "English",

volume = "93",

pages = "6065--6067",

journal = "Journal of Applied Physics ",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10 1",

}

TY - JOUR

T1 - Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1-x)As (x ∼ 0.8) quantum wells grown on InP

AU - Lai, K. T.

AU - Missous, M.

AU - Gupta, R.

AU - Haywood, S. K.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The intersubband absorption in strain-compensated quantum wells grown on InP was studied. The room temperature absorption spectra showed several peaks which originated from intersubband transitions in the conduction band of the InGaAs well. It was found that the transition energies were in agreement with the theoretical model.

AB - The intersubband absorption in strain-compensated quantum wells grown on InP was studied. The room temperature absorption spectra showed several peaks which originated from intersubband transitions in the conduction band of the InGaAs well. It was found that the transition energies were in agreement with the theoretical model.

UR - http://www.scopus.com/inward/record.url?scp=0037974693&partnerID=8YFLogxK

U2 - 10.1063/1.1565688

DO - 10.1063/1.1565688

M3 - Article

AN - SCOPUS:0037974693

SN - 0021-8979

VL - 93

SP - 6065

EP - 6067

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 1

ER -

Intersubband absorption in strain-compensated InAlAs/AlAs/In_xGa_(1-x)As (x ∼ 0.8) quantum wells grown on InP

Abstract

Access to Document

Other files and links

Fingerprint

Cite this