Intersubband transitions in InGaAs/InAlAs multiple quantum wells grown on InP substrate

Qiaoying Zhou; M. O. Manasreh; B. D. Weaver; M. Missous

Intersubband transitions in InGaAs/InAlAs multiple quantum wells grown on InP substrate

Qiaoying Zhou, M. O. Manasreh, B. D. Weaver, M. Missous

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

Intersubband transitions in In_0.52Ga_0.48As/In_0.52Al_0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

Original language	English
Pages (from-to)	253-258
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	692
Publication status	Published - 1 Jan 2002

Cite this

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title = "Intersubband transitions in InGaAs/InAlAs multiple quantum wells grown on InP substrate",

abstract = "Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 {\AA}. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.",

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year = "2002",

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AU - Zhou, Qiaoying

AU - Manasreh, M. O.

AU - Weaver, B. D.

AU - Missous, M.

PY - 2002/1/1

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N2 - Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

AB - Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Intersubband transitions in InGaAs/InAlAs multiple quantum wells grown on InP substrate

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