Intersubband transitions in proton irradiated InGaAs/InAlAs multiple quantum wells grown on lattice matched InP substrate

Qiaoying Zhou; M. O. Manasreh; B. D. Weaver; M. Missous

Intersubband transitions in proton irradiated InGaAs/InAlAs multiple quantum wells grown on lattice matched InP substrate

Qiaoying Zhou^*, M. O. Manasreh, B. D. Weaver, M. Missous

^*Corresponding author for this work

EEE - Academic & Research

Research output: Contribution to journal › Conference article › peer-review

Abstract

Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1×10¹⁴ cm^-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3×10¹⁵ cm^-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.

Original language	English
Pages (from-to)	301-307
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	744
Publication status	Published - 1 Dec 2002
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: 2 Dec 2002 → 5 Dec 2002

Cite this

@article{7c6fc200a7234796b31787cefb46730f,

title = "Intersubband transitions in proton irradiated InGaAs/InAlAs multiple quantum wells grown on lattice matched InP substrate",

abstract = "Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1×1014 cm-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3×1015 cm-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.",

author = "Qiaoying Zhou and Manasreh, {M. O.} and Weaver, {B. D.} and M. Missous",

year = "2002",

month = dec,

day = "1",

language = "English",

volume = "744",

pages = "301--307",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

}

TY - JOUR

T1 - Intersubband transitions in proton irradiated InGaAs/InAlAs multiple quantum wells grown on lattice matched InP substrate

AU - Zhou, Qiaoying

AU - Manasreh, M. O.

AU - Weaver, B. D.

AU - Missous, M.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1×1014 cm-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3×1015 cm-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.

AB - Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1×1014 cm-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3×1015 cm-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.

UR - http://www.scopus.com/inward/record.url?scp=0038826332&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038826332

SN - 0272-9172

VL - 744

SP - 301

EP - 307

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Intersubband transitions in proton irradiated InGaAs/InAlAs multiple quantum wells grown on lattice matched InP substrate

Abstract

Other files and links

Fingerprint

Cite this