Intersubband transitions in proton irradiated In0.52Ga 0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

Qiaoying Zhou; M. O. Manasreh; B. D. Weaver; M. Missous

doi:10.1063/1.1519726

Intersubband transitions in proton irradiated In_0.52Ga _0.48As/In_0.52Al_0.48As multiple quantum wells grown on semi-insulating InP substrate

Qiaoying Zhou^*, M. O. Manasreh, B. D. Weaver, M. Missous

^*Corresponding author for this work

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

Intersubband transitions in In_0.52Ga_0.48As/In _0.52Al_0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×10¹⁴cm^-2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×10¹⁴cm^-2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×10¹⁵cm^-2 and completely depleted after irradiation with a dose of 3×10¹⁵cm^-2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered.

Original language	English
Pages (from-to)	3374-3376
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	18
DOIs	https://doi.org/10.1063/1.1519726
Publication status	Published - 28 Oct 2002

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title = "Intersubband transitions in proton irradiated In0.52Ga 0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate",

abstract = "Intersubband transitions in In0.52Ga0.48As/In 0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014cm-2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014cm-2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015cm-2 and completely depleted after irradiation with a dose of 3×1015cm-2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered.",

author = "Qiaoying Zhou and Manasreh, {M. O.} and Weaver, {B. D.} and M. Missous",

year = "2002",

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day = "28",

doi = "10.1063/1.1519726",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Intersubband transitions in proton irradiated In0.52Ga 0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

AU - Zhou, Qiaoying

AU - Manasreh, M. O.

AU - Weaver, B. D.

AU - Missous, M.

PY - 2002/10/28

Y1 - 2002/10/28

N2 - Intersubband transitions in In0.52Ga0.48As/In 0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014cm-2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014cm-2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015cm-2 and completely depleted after irradiation with a dose of 3×1015cm-2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered.

AB - Intersubband transitions in In0.52Ga0.48As/In 0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014cm-2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014cm-2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015cm-2 and completely depleted after irradiation with a dose of 3×1015cm-2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered.

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Intersubband transitions in proton irradiated In_0.52Ga _0.48As/In_0.52Al_0.48As multiple quantum wells grown on semi-insulating InP substrate

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