Intersubband transitions in proton irradiated In0.52Ga 0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

Qiaoying Zhou, M. O. Manasreh, B. D. Weaver, M. Missous

Research output: Contribution to journalArticlepeer-review

Abstract

Intersubband transitions in In0.52Ga0.48As/In 0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014cm-2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014cm-2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015cm-2 and completely depleted after irradiation with a dose of 3×1015cm-2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered.

Original languageEnglish
Pages (from-to)3374-3376
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number18
DOIs
Publication statusPublished - 28 Oct 2002

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