Inverted deposition and high-velocity spinning to develop buried planar chalcogenide glass waveguides for highly nonlinear integrated optics

A. K. Mairaj; R. J. Curry; Daniel W. Hewak

doi:10.1063/1.1856686

Inverted deposition and high-velocity spinning to develop buried planar chalcogenide glass waveguides for highly nonlinear integrated optics

A. K. Mairaj, R. J. Curry, Daniel W. Hewak

University of Southampton

Research output: Contribution to journal › Article › peer-review

Abstract

We report on buried planar waveguides in a highly nonlinear infrared transmitting chalcogenide glass, fabricated using a combination of inverted deposition of the molten glass phase and high-velocity spinning. Films of gallium lanthanum sulphide (Ga:La:S) glass were deposited onto an expansion coefficient matched Ga:La:S cladding substrate. These amorphous films, with an optimized composition designed to be resistant against crystallization, were observed to have an excellent interface quality and uniformity. The designed planar chip had a buried core, 6 μm thick in the vertical direction, in single-mode operation at 1.064 μm and a measured propagation loss of <0.2 dB cm-1. Through this technique waveguides from Ga:La:S glass, a highly versatile optical semiconductor material, can potentially be used in nonlinear applications as well as provide passive and active integrated optic functionality into the infrared beyond 5 μm.

Original language	English
Article number	094102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	9
DOIs	https://doi.org/10.1063/1.1856686
Publication status	Published - 28 Feb 2005

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title = "Inverted deposition and high-velocity spinning to develop buried planar chalcogenide glass waveguides for highly nonlinear integrated optics",

abstract = "We report on buried planar waveguides in a highly nonlinear infrared transmitting chalcogenide glass, fabricated using a combination of inverted deposition of the molten glass phase and high-velocity spinning. Films of gallium lanthanum sulphide (Ga:La:S) glass were deposited onto an expansion coefficient matched Ga:La:S cladding substrate. These amorphous films, with an optimized composition designed to be resistant against crystallization, were observed to have an excellent interface quality and uniformity. The designed planar chip had a buried core, 6 μm thick in the vertical direction, in single-mode operation at 1.064 μm and a measured propagation loss of <0.2 dB cm-1. Through this technique waveguides from Ga:La:S glass, a highly versatile optical semiconductor material, can potentially be used in nonlinear applications as well as provide passive and active integrated optic functionality into the infrared beyond 5 μm.",

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AB - We report on buried planar waveguides in a highly nonlinear infrared transmitting chalcogenide glass, fabricated using a combination of inverted deposition of the molten glass phase and high-velocity spinning. Films of gallium lanthanum sulphide (Ga:La:S) glass were deposited onto an expansion coefficient matched Ga:La:S cladding substrate. These amorphous films, with an optimized composition designed to be resistant against crystallization, were observed to have an excellent interface quality and uniformity. The designed planar chip had a buried core, 6 μm thick in the vertical direction, in single-mode operation at 1.064 μm and a measured propagation loss of <0.2 dB cm-1. Through this technique waveguides from Ga:La:S glass, a highly versatile optical semiconductor material, can potentially be used in nonlinear applications as well as provide passive and active integrated optic functionality into the infrared beyond 5 μm.

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Inverted deposition and high-velocity spinning to develop buried planar chalcogenide glass waveguides for highly nonlinear integrated optics

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