Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots

J. Pal; G. Tse; S. Tomić; M. A. Migliorato

doi:10.1109/NUSOD.2011.6041191

Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots

J. Pal, G. Tse, S. Tomić, M. A. Migliorato

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate the effects of linear and non linear piezoelectricity in wurtzite III-N semiconductors and their influence on the electronic properties of low dimensional quantum dots. By studying the dependence of the biexciton on structural and geometrical parameters of the nanostructure, we show second order to be important particularly when the strain in the nanostructure is reduced © 2011 IEEE.

Original language	English
Title of host publication	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD\|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD
Publisher	IEEE
Pages	155-156
Number of pages	1
ISBN (Print)	9781612848785
DOIs	https://doi.org/10.1109/NUSOD.2011.6041191
Publication status	Published - 2011
Event	11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 - Rome Duration: 1 Jul 2011 → …

Conference

Conference	11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011
City	Rome
Period	1/07/11 → …

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10.1109/NUSOD.2011.6041191

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Pal, J., Tse, G., Tomić, S., & Migliorato, M. A. (2011). Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots. In Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD (pp. 155-156). IEEE. https://doi.org/10.1109/NUSOD.2011.6041191

@inproceedings{ccabf8064c43423b8c6b44aaa722ac68,

title = "Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots",

abstract = "We investigate the effects of linear and non linear piezoelectricity in wurtzite III-N semiconductors and their influence on the electronic properties of low dimensional quantum dots. By studying the dependence of the biexciton on structural and geometrical parameters of the nanostructure, we show second order to be important particularly when the strain in the nanostructure is reduced {\textcopyright} 2011 IEEE.",

author = "J. Pal and G. Tse and S. Tomi{\'c} and Migliorato, {M. A.}",

year = "2011",

doi = "10.1109/NUSOD.2011.6041191",

language = "English",

isbn = "9781612848785",

pages = "155--156",

booktitle = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD",

publisher = "IEEE",

address = "United States",

note = "11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 ; Conference date: 01-07-2011",

}

Pal, J, Tse, G, Tomić, S & Migliorato, MA 2011, Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots. in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD. IEEE, pp. 155-156, 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011, Rome, 1/07/11. https://doi.org/10.1109/NUSOD.2011.6041191

Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots. / Pal, J.; Tse, G.; Tomić, S. et al.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD. IEEE, 2011. p. 155-156.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots

AU - Pal, J.

AU - Tse, G.

AU - Tomić, S.

AU - Migliorato, M. A.

PY - 2011

Y1 - 2011

N2 - We investigate the effects of linear and non linear piezoelectricity in wurtzite III-N semiconductors and their influence on the electronic properties of low dimensional quantum dots. By studying the dependence of the biexciton on structural and geometrical parameters of the nanostructure, we show second order to be important particularly when the strain in the nanostructure is reduced © 2011 IEEE.

AB - We investigate the effects of linear and non linear piezoelectricity in wurtzite III-N semiconductors and their influence on the electronic properties of low dimensional quantum dots. By studying the dependence of the biexciton on structural and geometrical parameters of the nanostructure, we show second order to be important particularly when the strain in the nanostructure is reduced © 2011 IEEE.

U2 - 10.1109/NUSOD.2011.6041191

DO - 10.1109/NUSOD.2011.6041191

M3 - Conference contribution

SN - 9781612848785

SP - 155

EP - 156

BT - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD

PB - IEEE

T2 - 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011

Y2 - 1 July 2011

ER -

Pal J, Tse G, Tomić S, Migliorato MA. Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots. In Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD. IEEE. 2011. p. 155-156 doi: 10.1109/NUSOD.2011.6041191

Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots

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