Investigation of high- K gate stacks with epitaxial Gd 2 O 3 and FUSI NiSi metal gates down to CET= 0.86 nm

HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, T Wahlbrink, Max C Lemme, H Kurz

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	904-908
Number of pages	5
Journal	Materials science in semiconductor processing
Volume	9
Issue number	6
Publication status	Published - 2006

Cite this

@article{093f1f48e3614a9a8cfc3110ca602322,

title = "Investigation of high- K gate stacks with epitaxial Gd 2 O 3 and FUSI NiSi metal gates down to CET= 0.86 nm",

author = "HDB Gottlob and T Echtermeyer and T Mollenhauer and JK Efavi and M Schmidt and T Wahlbrink and Lemme, {Max C} and H Kurz",

year = "2006",

language = "English",

volume = "9",

pages = "904--908",

journal = "Materials science in semiconductor processing",

publisher = "Elsevier BV",

number = "6",

}

TY - JOUR

T1 - Investigation of high- K gate stacks with epitaxial Gd 2 O 3 and FUSI NiSi metal gates down to CET= 0.86 nm

AU - Gottlob, HDB

AU - Echtermeyer, T

AU - Mollenhauer, T

AU - Efavi, JK

AU - Schmidt, M

AU - Wahlbrink, T

AU - Lemme, Max C

AU - Kurz, H

PY - 2006

Y1 - 2006

M3 - Article

VL - 9

SP - 904

EP - 908

JO - Materials science in semiconductor processing

JF - Materials science in semiconductor processing

IS - 6

ER -