Investigation of mm-wave RTD based amplifiers

V. Doychinov; D. P. Steenson; S. Muttlak; J. Sexton; M. Missous

doi:10.1109/IRMMW-THz.2016.7758969

Investigation of mm-wave RTD based amplifiers

V. Doychinov
, D. P. Steenson
, S. Muttlak
, J. Sexton
, M. Missous

University of Leeds
Institute of Microwaves and Photonics

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz.

Original language	English
Title of host publication	41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Publisher	IEEE Computer Society
Volume	2016-November
ISBN (Electronic)	9781467384858
DOIs	https://doi.org/10.1109/IRMMW-THz.2016.7758969
Publication status	Published - 28 Nov 2016
Event	41st International Conference on Infrared, Millimeter and Terahertz Waves - Copenhagen, Denmark Duration: 25 Sept 2016 → 30 Sept 2016

Conference

Conference	41st International Conference on Infrared, Millimeter and Terahertz Waves
Abbreviated title	IRMMW-THz 2016
Country/Territory	Denmark
City	Copenhagen
Period	25/09/16 → 30/09/16

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10.1109/IRMMW-THz.2016.7758969

Cite this

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title = "Investigation of mm-wave RTD based amplifiers",

abstract = "This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz.",

author = "V. Doychinov and Steenson, \{D. P.\} and S. Muttlak and J. Sexton and M. Missous",

year = "2016",

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doi = "10.1109/IRMMW-THz.2016.7758969",

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booktitle = "41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016",

publisher = "IEEE Computer Society ",

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note = "41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 ; Conference date: 25-09-2016 Through 30-09-2016",

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Doychinov, V, Steenson, DP, Muttlak, S, Sexton, J & Missous, M 2016, Investigation of mm-wave RTD based amplifiers. in 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. vol. 2016-November, 7758969, IEEE Computer Society , 41st International Conference on Infrared, Millimeter and Terahertz Waves, Copenhagen, Denmark, 25/09/16. https://doi.org/10.1109/IRMMW-THz.2016.7758969

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T1 - Investigation of mm-wave RTD based amplifiers

AU - Doychinov, V.

AU - Steenson, D. P.

AU - Muttlak, S.

AU - Sexton, J.

AU - Missous, M.

PY - 2016/11/28

Y1 - 2016/11/28

N2 - This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz.

AB - This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz.

UR - https://www.scopus.com/pages/publications/85006167823

U2 - 10.1109/IRMMW-THz.2016.7758969

DO - 10.1109/IRMMW-THz.2016.7758969

M3 - Conference contribution

AN - SCOPUS:85006167823

VL - 2016-November

BT - 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016

PB - IEEE Computer Society

T2 - 41st International Conference on Infrared, Millimeter and Terahertz Waves

Y2 - 25 September 2016 through 30 September 2016

ER -

Investigation of mm-wave RTD based amplifiers

Abstract

Conference

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