Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd<sub> 2 O<sub> 3) and titanium nitride (TiN) electrodes

T Echtermeyer, HDB Gottlob, T Wahlbrink, T Mollenhauer, M Schmidt, JK Efavi, Max C Lemme, H Kurz

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Cite this

@article{630f81e270e241e798237e8c3d586e93,

title = "Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd 2 O 3) and titanium nitride (TiN) electrodes",

author = "T Echtermeyer and HDB Gottlob and T Wahlbrink and T Mollenhauer and M Schmidt and JK Efavi and Lemme, {Max C} and H Kurz",

year = "2007",

language = "English",

volume = "51",

pages = "617--621",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier BV",

number = "4",

}

TY - JOUR

T1 - Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd 2 O 3) and titanium nitride (TiN) electrodes

AU - Echtermeyer, T

AU - Gottlob, HDB

AU - Wahlbrink, T

AU - Mollenhauer, T

AU - Schmidt, M

AU - Efavi, JK

AU - Lemme, Max C

AU - Kurz, H

PY - 2007

Y1 - 2007

M3 - Article

VL - 51

SP - 617

EP - 621

JO - Solid State Electronics

JF - Solid State Electronics

SN - 0038-1101

IS - 4

ER -