Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd<sub> 2 O<sub> 3) and titanium nitride (TiN) electrodes

T Echtermeyer, HDB Gottlob, T Wahlbrink, T Mollenhauer, M Schmidt, JK Efavi, Max C Lemme, H Kurz

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish
    Pages (from-to)617-621
    Number of pages5
    JournalSolid-state electronics
    Volume51
    Issue number4
    Publication statusPublished - 2007

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