Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors

H. A. Khan, A. A. Rezazadeh

    Research output: Contribution to journalArticlepeer-review

    93 Downloads (Pure)

    Abstract

    An optically generated kink observed in the Gummel plot of AlGaAs/GaAs single heterojunction phototransistors (sHPTs) is reported when illuminated with relatively high optical powers. The observed sudden rise in collector current and decrease in the base current, referred to as 'optical kink effect', is carefully studied and analyzed. The measurements are performed for incident optical power of up to 225 μW at an incident wavelength of 635 nm. This rise in the current gain of HPTs, in three terminal configuration, is associated with the base-collector space-charge modulation similar to the kirk effect. © 2011 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.
    Original languageEnglish
    Pages (from-to)143-146
    Number of pages3
    JournalEuropean Physical Journal B
    Volume83
    Issue number2
    DOIs
    Publication statusPublished - Sept 2011

    Keywords

    • heterojunction phototransistors, kink effect, AlGaAs/GaAs

    Fingerprint

    Dive into the research topics of 'Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors'. Together they form a unique fingerprint.

    Cite this