Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness

R. J. Kashtiban; U. Bangert; M. Missous

doi:10.1016/j.mejo.2008.06.078

Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness

R. J. Kashtiban, U. Bangert, M. Missous

Research output: Chapter in Book/Conference proceeding › Conference contribution

Abstract

Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8-3.2 nm height and 13-16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS). © 2008 Elsevier Ltd. All rights reserved.

Original language	English
Title of host publication	Microelectronics Journal\|Microelectron J
Pages	479-482
Number of pages	3
Volume	40
DOIs	https://doi.org/10.1016/j.mejo.2008.06.078
Publication status	Published - Mar 2009
Event	Workshop on Recent Advances on Low Dimensional Structures and Devices - Nottingham, ENGLAND Duration: 1 Jan 1824 → … http://<Go to ISI>://000264694700027

Conference

Conference	Workshop on Recent Advances on Low Dimensional Structures and Devices
City	Nottingham, ENGLAND
Period	1/01/24 → …
Internet address	http://<Go to ISI>://000264694700027

Keywords

EELS
HAADF
InAs quantum dots
Molecular beam epitaxy

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10.1016/j.mejo.2008.06.078

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@inproceedings{86a1249968174bacbac5aaf53f0344ec,

title = "Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness",

abstract = "Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8-3.2 nm height and 13-16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS). {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

keywords = "EELS, HAADF, InAs quantum dots, Molecular beam epitaxy",

author = "Kashtiban, {R. J.} and U. Bangert and M. Missous",

note = "Kashtiban, R. J. Bangert, U. Missous, M.; Workshop on Recent Advances on Low Dimensional Structures and Devices ; Conference date: 01-01-1824",

year = "2009",

month = mar,

doi = "10.1016/j.mejo.2008.06.078",

language = "English",

volume = "40",

pages = "479--482",

booktitle = "Microelectronics Journal|Microelectron J",

url = "http://<Go to ISI>://000264694700027",

}

Kashtiban, RJ, Bangert, U & Missous, M 2009, Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness. in Microelectronics Journal|Microelectron J. vol. 40, pp. 479-482, Workshop on Recent Advances on Low Dimensional Structures and Devices, Nottingham, ENGLAND, 1/01/24. https://doi.org/10.1016/j.mejo.2008.06.078

TY - GEN

T1 - Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness

AU - Kashtiban, R. J.

AU - Bangert, U.

AU - Missous, M.

N1 - Kashtiban, R. J. Bangert, U. Missous, M.

PY - 2009/3

Y1 - 2009/3

N2 - Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8-3.2 nm height and 13-16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS). © 2008 Elsevier Ltd. All rights reserved.

AB - Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8-3.2 nm height and 13-16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS). © 2008 Elsevier Ltd. All rights reserved.

KW - EELS

KW - HAADF

KW - InAs quantum dots

KW - Molecular beam epitaxy

U2 - 10.1016/j.mejo.2008.06.078

DO - 10.1016/j.mejo.2008.06.078

M3 - Conference contribution

VL - 40

SP - 479

EP - 482

BT - Microelectronics Journal|Microelectron J

T2 - Workshop on Recent Advances on Low Dimensional Structures and Devices

Y2 - 1 January 1824

ER -

Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness

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Keywords

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