TY - JOUR
T1 - Investigations of Asymmetric Spacer Tunnel Layer (ASPAT) Diodes for High-Frequency Applications
AU - Zainul Ariffin, Khairul Nabilah
AU - Wang, Yan
AU - Abdullah, Mohd Rashid Redza Bin
AU - Muttlak, Saad
AU - Abdulwahid, Omar
AU - Sexton, James
AU - Ian, Ka Wa
AU - Kelly, Michael J.
AU - Missous, Mohamed
PY - 2017
Y1 - 2017
N2 - A complete description of physical models for fabricated Asymmetric Spacer Tunnel Layer (ASPAT) diodes is reported in this work. A novel In0.53Ga0.47As/AlAs design is presented and compared to the conventional GaAs/AlAs material system. For both material schemes, physical models were developed based on experimental measurements. Simulated DC characteristics of the devices are given for both planar and back contacted structures to highlight the impact of spreading resistance on device behaviour. Furthermore, full s-parameter derivations from numerical simulation for tunnel diodes are demonstrated for the first time on the basis of quantum-mechanical AC modelling of the capacitance-voltage and conductance-voltage performances of these ASPAT diodes. A negligibly small difference between measured and simulated zero-biased intrinsic capacitances is observed (i.e. ≤ 0.2 fF). These are beneficial for accurate predictive models for device characteristics. In addition, key parameters which can be extracted from simulation results are obtained to aid in the development of mm-wave/THz
AB - A complete description of physical models for fabricated Asymmetric Spacer Tunnel Layer (ASPAT) diodes is reported in this work. A novel In0.53Ga0.47As/AlAs design is presented and compared to the conventional GaAs/AlAs material system. For both material schemes, physical models were developed based on experimental measurements. Simulated DC characteristics of the devices are given for both planar and back contacted structures to highlight the impact of spreading resistance on device behaviour. Furthermore, full s-parameter derivations from numerical simulation for tunnel diodes are demonstrated for the first time on the basis of quantum-mechanical AC modelling of the capacitance-voltage and conductance-voltage performances of these ASPAT diodes. A negligibly small difference between measured and simulated zero-biased intrinsic capacitances is observed (i.e. ≤ 0.2 fF). These are beneficial for accurate predictive models for device characteristics. In addition, key parameters which can be extracted from simulation results are obtained to aid in the development of mm-wave/THz
KW - ASPAT tunnelling device
KW - DC and RF characterization
KW - physical modelling
U2 - 10.1109/TED.2017.2777803
DO - 10.1109/TED.2017.2777803
M3 - Article
SN - 0018-9383
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
ER -