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Investigations of electronic states in self-assembled InAs/GaAs quantum-dot structures
Shiwei Lin,
Aimin Song
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Chapter in Book/Conference proceeding
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Engineering
Electronic State
100%
Gallium Arsenide
100%
Deep Level
100%
Quantum Dot
100%
Transients
64%
Semiconductor Quantum Dot
14%
Rapid Thermal Annealing
14%
Dot Layer
14%
Defects
7%
Optical Spectrum
7%
Annealing Temperature
7%
Growth Process
7%
Electron System
7%
Reverse Bias
7%
Growth Mode
7%
Room Temperature
7%
Electron Emission
7%
Space Charge
7%
Reference Sample
7%
Epitaxial Layer
7%
Material Science
Quantum Dot
100%
Gallium Arsenide
100%
Deep-Level Transient Spectroscopy
81%
Spectroscopy Technique
27%
Photoluminescence
27%
Capacitance
18%
Annealing
18%
Electronic Property
9%
Electronic Structure
9%
Epitaxial Layer
9%
Schottky Diode
9%
Point Defect
9%
Physics
Electron Distribution
9%