Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

Emily Aradi, S.R. Naidoo, D. G. Billling, D. Wamwangi, I. Motochi, T. E. Derry

Research output: Contribution to journalArticlepeer-review

Abstract

The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be 5 × 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spectroscopy indicated a peak at 1092 cm−1 which corresponds to the vibrational mode for nanocrystalline BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative to the implantation depth of 0.4 μm.

Keywords

  • Ion implantation
  • Glancing incidence XRD
  • Fourier transform
  • Infrared spectroscopy

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