Ion beam synthesized silicides: Growth, characterization and devices

K. P. Homewood, Karen Kirkby, R. M. Gwilliam, A. K. Kewell, M. A. Lourenço, G. Shao, Y. L. Chen, J. S. Sharpe, C. N. McKinty, T. Butler

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Semiconducting silicides promise particular advantages for the development of optoelectronic devices in silicon. In particular, the direct gap of some of these silicides and the strong optical transitions make them good candidates for efficient light sources in silicon. Our work on the fabrication of iron disilicide and diruthenium trisilicide, materials and devices, using ion beam synthesis, is described here and offers a technology closely compatible with conventional silicon processing.

    Original languageEnglish
    Pages (from-to)188-193
    Number of pages6
    JournalThin Solid Films
    Volume381
    Issue number2
    DOIs
    Publication statusPublished - 15 Jan 2001

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