Ion beam synthesized silicides: Growth, characterization and devices

K. P. Homewood; Karen Kirkby; R. M. Gwilliam; A. K. Kewell; M. A. Lourenço; G. Shao; Y. L. Chen; J. S. Sharpe; C. N. McKinty; T. Butler

doi:10.1016/S0040-6090(00)01742-9

Ion beam synthesized silicides: Growth, characterization and devices

K. P. Homewood^*, Karen Kirkby, R. M. Gwilliam, A. K. Kewell, M. A. Lourenço, G. Shao, Y. L. Chen, J. S. Sharpe, C. N. McKinty, T. Butler

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Semiconducting silicides promise particular advantages for the development of optoelectronic devices in silicon. In particular, the direct gap of some of these silicides and the strong optical transitions make them good candidates for efficient light sources in silicon. Our work on the fabrication of iron disilicide and diruthenium trisilicide, materials and devices, using ion beam synthesis, is described here and offers a technology closely compatible with conventional silicon processing.

Original language	English
Pages (from-to)	188-193
Number of pages	6
Journal	Thin Solid Films
Volume	381
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(00)01742-9
Publication status	Published - 15 Jan 2001

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@article{ad55f6a997b84c9bb7ecc725631f3e3c,

title = "Ion beam synthesized silicides: Growth, characterization and devices",

abstract = "Semiconducting silicides promise particular advantages for the development of optoelectronic devices in silicon. In particular, the direct gap of some of these silicides and the strong optical transitions make them good candidates for efficient light sources in silicon. Our work on the fabrication of iron disilicide and diruthenium trisilicide, materials and devices, using ion beam synthesis, is described here and offers a technology closely compatible with conventional silicon processing.",

author = "Homewood, {K. P.} and Karen Kirkby and Gwilliam, {R. M.} and Kewell, {A. K.} and Louren{\c c}o, {M. A.} and G. Shao and Chen, {Y. L.} and Sharpe, {J. S.} and McKinty, {C. N.} and T. Butler",

year = "2001",

month = jan,

day = "15",

doi = "10.1016/S0040-6090(00)01742-9",

language = "English",

volume = "381",

pages = "188--193",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Ion beam synthesized silicides

T2 - Growth, characterization and devices

AU - Homewood, K. P.

AU - Kirkby, Karen

AU - Gwilliam, R. M.

AU - Kewell, A. K.

AU - Lourenço, M. A.

AU - Shao, G.

AU - Chen, Y. L.

AU - Sharpe, J. S.

AU - McKinty, C. N.

AU - Butler, T.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - Semiconducting silicides promise particular advantages for the development of optoelectronic devices in silicon. In particular, the direct gap of some of these silicides and the strong optical transitions make them good candidates for efficient light sources in silicon. Our work on the fabrication of iron disilicide and diruthenium trisilicide, materials and devices, using ion beam synthesis, is described here and offers a technology closely compatible with conventional silicon processing.

AB - Semiconducting silicides promise particular advantages for the development of optoelectronic devices in silicon. In particular, the direct gap of some of these silicides and the strong optical transitions make them good candidates for efficient light sources in silicon. Our work on the fabrication of iron disilicide and diruthenium trisilicide, materials and devices, using ion beam synthesis, is described here and offers a technology closely compatible with conventional silicon processing.

UR - http://www.scopus.com/inward/record.url?scp=18744420809&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01742-9

DO - 10.1016/S0040-6090(00)01742-9

M3 - Article

AN - SCOPUS:18744420809

SN - 0040-6090

VL - 381

SP - 188

EP - 193

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Ion beam synthesized silicides: Growth, characterization and devices

Abstract

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