Isomer-pure synthesis and preparation of FET using thieno[f,f′]bis[1] benzothiophene (syn, anti)

Brigitte Wex; Bilal R. Kaafarani; Raoul Schroeder; Leszek A. Majewski; Martin Grell; Douglas C. Neckers

Isomer-pure synthesis and preparation of FET using thieno[f,f′]bis[1] benzothiophene (syn, anti)

Brigitte Wex, Bilal R. Kaafarani, Raoul Schroeder, Leszek A. Majewski, Martin Grell, Douglas C. Neckers

Research output: Contribution to journal › Article › peer-review

Abstract

The field-effect mobility in two isomers of thieno[f,f′]bis[1] benzothiophene was studied as a function of structure. Both regioisomers exhibit substantial mobilities up to 0.12 cm-2/Vs, a value that is at most one order of magnitude lower than the best known organic transistors based on silicon dioxide gate insulators. The devices based on these materials exhibit another phenomenon, namely a shift in the threshold voltage during operation. This shift differs from usually observed threshold voltage changes in amount and irreversibility. In this paper, we present possible explanations for the observed behavior.

Original language	English
Article number	594004
Pages (from-to)	1-7
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5940
Publication status	Published - 2005

Keywords

Isomer-pure
Mobility
OFET
Organic transistor
Thieno[f,f′]bis[1]benzothiophene

Cite this

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title = "Isomer-pure synthesis and preparation of FET using thieno[f,f′]bis[1] benzothiophene (syn, anti)",

abstract = "The field-effect mobility in two isomers of thieno[f,f′]bis[1] benzothiophene was studied as a function of structure. Both regioisomers exhibit substantial mobilities up to 0.12 cm-2/Vs, a value that is at most one order of magnitude lower than the best known organic transistors based on silicon dioxide gate insulators. The devices based on these materials exhibit another phenomenon, namely a shift in the threshold voltage during operation. This shift differs from usually observed threshold voltage changes in amount and irreversibility. In this paper, we present possible explanations for the observed behavior.",

keywords = "Isomer-pure, Mobility, OFET, Organic transistor, Thieno[f,f′]bis[1]benzothiophene",

author = "Brigitte Wex and Kaafarani, {Bilal R.} and Raoul Schroeder and Majewski, {Leszek A.} and Martin Grell and Neckers, {Douglas C.}",

year = "2005",

language = "English",

volume = "5940",

pages = "1--7",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Isomer-pure synthesis and preparation of FET using thieno[f,f′]bis[1] benzothiophene (syn, anti)

AU - Wex, Brigitte

AU - Kaafarani, Bilal R.

AU - Schroeder, Raoul

AU - Majewski, Leszek A.

AU - Grell, Martin

AU - Neckers, Douglas C.

PY - 2005

Y1 - 2005

N2 - The field-effect mobility in two isomers of thieno[f,f′]bis[1] benzothiophene was studied as a function of structure. Both regioisomers exhibit substantial mobilities up to 0.12 cm-2/Vs, a value that is at most one order of magnitude lower than the best known organic transistors based on silicon dioxide gate insulators. The devices based on these materials exhibit another phenomenon, namely a shift in the threshold voltage during operation. This shift differs from usually observed threshold voltage changes in amount and irreversibility. In this paper, we present possible explanations for the observed behavior.

AB - The field-effect mobility in two isomers of thieno[f,f′]bis[1] benzothiophene was studied as a function of structure. Both regioisomers exhibit substantial mobilities up to 0.12 cm-2/Vs, a value that is at most one order of magnitude lower than the best known organic transistors based on silicon dioxide gate insulators. The devices based on these materials exhibit another phenomenon, namely a shift in the threshold voltage during operation. This shift differs from usually observed threshold voltage changes in amount and irreversibility. In this paper, we present possible explanations for the observed behavior.

KW - Isomer-pure

KW - Mobility

KW - OFET

KW - Organic transistor

KW - Thieno[f,f′]bis[1]benzothiophene

M3 - Article

VL - 5940

SP - 1

EP - 7

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 594004

ER -

Isomer-pure synthesis and preparation of FET using thieno[f,f′]bis[1] benzothiophene (syn, anti)

Abstract

Keywords

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