L-band low noise amplifier using a novel InGaAs/InAlAs/InP device

Z. Hamaizia; N. Sengouga; M. Missous; M. C.E. Yagoub

doi:10.1109/SETIT.2012.6481925

L-band low noise amplifier using a novel InGaAs/InAlAs/InP device

Z. Hamaizia, N. Sengouga, M. Missous, M. C.E. Yagoub

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1-dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of -12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.

Original language	English
Title of host publication	2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012
Publisher	IEEE
Pages	258-262
Number of pages	5
ISBN (Print)	9781467316576
DOIs	https://doi.org/10.1109/SETIT.2012.6481925
Publication status	Published - 1 Dec 2012
Event	2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012 - Sousse, Tunisia Duration: 21 Mar 2012 → 24 Mar 2012

Conference

Conference	2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012
Country/Territory	Tunisia
City	Sousse
Period	21/03/12 → 24/03/12

Keywords

HEMT
LNA
SKA
SKADS
telescope

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10.1109/SETIT.2012.6481925

Cite this

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title = "L-band low noise amplifier using a novel InGaAs/InAlAs/InP device",

abstract = "In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1-dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of -12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.",

keywords = "HEMT, LNA, SKA, SKADS, telescope",

author = "Z. Hamaizia and N. Sengouga and M. Missous and Yagoub, {M. C.E.}",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/SETIT.2012.6481925",

language = "English",

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booktitle = "2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012",

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note = "2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012 ; Conference date: 21-03-2012 Through 24-03-2012",

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Hamaizia, Z, Sengouga, N, Missous, M & Yagoub, MCE 2012, L-band low noise amplifier using a novel InGaAs/InAlAs/InP device. in 2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012., 6481925, IEEE, pp. 258-262, 2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012, Sousse, Tunisia, 21/03/12. https://doi.org/10.1109/SETIT.2012.6481925

L-band low noise amplifier using a novel InGaAs/InAlAs/InP device. / Hamaizia, Z.; Sengouga, N.; Missous, M. et al.
2012 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2012. IEEE, 2012. p. 258-262 6481925.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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KW - SKADS

KW - telescope

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ER -

L-band low noise amplifier using a novel InGaAs/InAlAs/InP device

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Conference

Keywords

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