Landau levels in deformed bilayer graphene at low magnetic fields

Marcin Mucha-Kruczyński, Igor L. Aleiner, Vladimir I. Fal'Ko

    Research output: Contribution to journalArticlepeer-review


    We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ν=±4 being the most stable in the quantum Hall effect measurement, instead of ν=±8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ν=±4 is, down to very low fields, weakly dependent on the strength of the magnetic field.

    Original languageEnglish
    Pages (from-to)1088-1093
    Number of pages6
    JournalSolid State Communications
    Issue number16
    Publication statusPublished - Aug 2011


    • A. Graphene
    • D. Elasticity
    • D. Electronic band structure
    • D. Quantum Hall effect

    Research Beacons, Institutes and Platforms

    • National Graphene Institute


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