Laplace deep level transient spectroscopy: Embodiment and evolution

A. R. Peaker, V. P. Markevich, I. D. Hawkins, B. Hamilton, K. Bonde Nielsen, K. Gościński

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    This paper is to commemorate the work of Leszek Dobaczewski 1 who devoted much of his life to the development and application of high resolution DLTS. Under good experimental conditions Laplace DLTS provides an order of magnitude higher energy resolution than conventional DLTS techniques. This has had a profound effect on electrical defect spectroscopy enabling the effect of external probes, such as uniaxial stress, and internal perturbations, such as the proximity of atoms isovalent with the host, to be quantified in terms of electronic behaviour. Laplace DLTS provides a synergy with other techniques that was difficult or impossible to achieve previously. In this paper we present an overview of the development of LDLTS and illustrate some of its uses by describing its application in a number of key areas of defect research. Leszek Dobaczewski was born on 25th December 1954. He received his education in Warsaw taking his PhD in 1986 with Jerzy Langer at the Institute of Physics on Recombination Processes at defects with the large lattice relaxation. He held a research position at the institute in Warsaw until he came to Manchester in 1990 and thereafter alternated between Manchester and Warsaw. He worked primarily on the development and application of high resolution DLTS. He was awarded the degree of DSc in 1994 for his work on DX centres and held an appointment as full professor in Warsaw with Visiting Professor posts at Manchester and Aarhus. © 2011 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)3026-3030
    Number of pages4
    JournalPhysica B: Condensed Matter
    Issue number15
    Publication statusPublished - 1 Aug 2012


    • Alloy interactions
    • Defects in semiconductors
    • Laplace deep level transient spectroscopy
    • Silicon
    • Silicon-germanium
    • Uniaxial stress


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