Laplace DLTS studies on deep levels coexisted with InAs quantum dots

S. W. Lin; A. R. Peaker; A. M. Song

doi:10.1002/pssc.200671560

Laplace DLTS studies on deep levels coexisted with InAs quantum dots

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Abstract

Self-assembled InAs/GaAs quantum dot structures have been investigated in both conventional and Laplace-transform deep-level transient spectroscopy (DLTS) experiments. Laplace DLTS technique provides orders of magnitude better energy resolution than conventional DLTS and hence enables us to study the electronic fine structure of the deep level states that are revealed using the conventional DLTS method. Two well-separated peaks corresponding to excitation energies of 468 meV and 485 meV are determined in the quantum dot sample, which have energy broadenings of 13.7 meV and 22.9 meV, respectively. A fine structure is also observed in the reference sample, but the ratio between the two peaks differs and the energy broadening is too narrow to be resolved even by the Laplace DLTS. The strain relaxation due to the QD formation is proposed to explain our observations. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	3844-3847
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
Issue number	11
DOIs	https://doi.org/10.1002/pssc.200671560
Publication status	Published - 2006

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title = "Laplace DLTS studies on deep levels coexisted with InAs quantum dots",

abstract = "Self-assembled InAs/GaAs quantum dot structures have been investigated in both conventional and Laplace-transform deep-level transient spectroscopy (DLTS) experiments. Laplace DLTS technique provides orders of magnitude better energy resolution than conventional DLTS and hence enables us to study the electronic fine structure of the deep level states that are revealed using the conventional DLTS method. Two well-separated peaks corresponding to excitation energies of 468 meV and 485 meV are determined in the quantum dot sample, which have energy broadenings of 13.7 meV and 22.9 meV, respectively. A fine structure is also observed in the reference sample, but the ratio between the two peaks differs and the energy broadening is too narrow to be resolved even by the Laplace DLTS. The strain relaxation due to the QD formation is proposed to explain our observations. {\textcopyright} 2006 WILEY-VCH Verlag GmbH & Co. KGaA.",

author = "Lin, {S. W.} and Peaker, {A. R.} and Song, {A. M.}",

note = "Times Cited: 0Stutzmann, M4th International Conference on Semiconductor Quantum Dots (QD 2006)MAY 01-05, 2006Chamonix Mont Blanc, FRANCE",

year = "2006",

doi = "10.1002/pssc.200671560",

language = "English",

volume = "3",

pages = "3844--3847",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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publisher = "John Wiley & Sons Ltd",

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T1 - Laplace DLTS studies on deep levels coexisted with InAs quantum dots

AU - Lin, S. W.

AU - Peaker, A. R.

AU - Song, A. M.

N1 - Times Cited: 0Stutzmann, M4th International Conference on Semiconductor Quantum Dots (QD 2006)MAY 01-05, 2006Chamonix Mont Blanc, FRANCE

PY - 2006

Y1 - 2006

N2 - Self-assembled InAs/GaAs quantum dot structures have been investigated in both conventional and Laplace-transform deep-level transient spectroscopy (DLTS) experiments. Laplace DLTS technique provides orders of magnitude better energy resolution than conventional DLTS and hence enables us to study the electronic fine structure of the deep level states that are revealed using the conventional DLTS method. Two well-separated peaks corresponding to excitation energies of 468 meV and 485 meV are determined in the quantum dot sample, which have energy broadenings of 13.7 meV and 22.9 meV, respectively. A fine structure is also observed in the reference sample, but the ratio between the two peaks differs and the energy broadening is too narrow to be resolved even by the Laplace DLTS. The strain relaxation due to the QD formation is proposed to explain our observations. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - Self-assembled InAs/GaAs quantum dot structures have been investigated in both conventional and Laplace-transform deep-level transient spectroscopy (DLTS) experiments. Laplace DLTS technique provides orders of magnitude better energy resolution than conventional DLTS and hence enables us to study the electronic fine structure of the deep level states that are revealed using the conventional DLTS method. Two well-separated peaks corresponding to excitation energies of 468 meV and 485 meV are determined in the quantum dot sample, which have energy broadenings of 13.7 meV and 22.9 meV, respectively. A fine structure is also observed in the reference sample, but the ratio between the two peaks differs and the energy broadening is too narrow to be resolved even by the Laplace DLTS. The strain relaxation due to the QD formation is proposed to explain our observations. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

U2 - 10.1002/pssc.200671560

DO - 10.1002/pssc.200671560

M3 - Article

SN - 1862-6351

VL - 3

SP - 3844

EP - 3847

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 11

ER -

Laplace DLTS studies on deep levels coexisted with InAs quantum dots

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