Laplace-transform deep-level spectroscopy characterization of the intrinsic and deep-level states in self-assembled InAs quantum-dot structures

S. W. Lin; A. M. Song; A. R. Peaker

doi:10.1063/1.3295427

Laplace-transform deep-level spectroscopy characterization of the intrinsic and deep-level states in self-assembled InAs quantum-dot structures

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

The electron emission from the intrinsic and deep-level states in self-assembled InAs/GaAs quantum-dot structures is probed using the Laplace-transform deep-level transient spectroscopy. The technique shows sufficient resolution to resolve electron emission from the singly and doubly occupied QD s states. By applying an appropriate set of voltage pulses across the Schottky-diode structure, we identify the electron distribution profile in the quantum-dot intrinsic states. © 2009 American Institute of Physics.

Original language	English
Title of host publication	AIP Conference Proceedings\|AIP Conf. Proc.
Place of Publication	USA
Publisher	American Institute of Physics
Pages	313-314
Number of pages	1
Volume	1199
ISBN (Print)	9780735407367
DOIs	https://doi.org/10.1063/1.3295427
Publication status	Published - 2009
Event	29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro Duration: 1 Jul 2009 → …

Conference

Conference	29th International Conference on Physics of Semiconductors, ICPS 29
City	Rio de Janeiro
Period	1/07/09 → …

Keywords

Deep-level transient spectroscopy
Laplace transform
Quantum dots

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10.1063/1.3295427

Cite this

@inproceedings{851ef33da5dc4e1e96ff2854430b66cf,

title = "Laplace-transform deep-level spectroscopy characterization of the intrinsic and deep-level states in self-assembled InAs quantum-dot structures",

abstract = "The electron emission from the intrinsic and deep-level states in self-assembled InAs/GaAs quantum-dot structures is probed using the Laplace-transform deep-level transient spectroscopy. The technique shows sufficient resolution to resolve electron emission from the singly and doubly occupied QD s states. By applying an appropriate set of voltage pulses across the Schottky-diode structure, we identify the electron distribution profile in the quantum-dot intrinsic states. {\textcopyright} 2009 American Institute of Physics.",

keywords = "Deep-level transient spectroscopy, Laplace transform, Quantum dots",

author = "Lin, {S. W.} and Song, {A. M.} and Peaker, {A. R.}",

year = "2009",

doi = "10.1063/1.3295427",

language = "English",

isbn = "9780735407367",

volume = "1199",

pages = "313--314",

booktitle = "AIP Conference Proceedings|AIP Conf. Proc.",

publisher = "American Institute of Physics",

address = "United States",

note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 01-07-2009",

}

Lin, SW, Song, AM & Peaker, AR 2009, Laplace-transform deep-level spectroscopy characterization of the intrinsic and deep-level states in self-assembled InAs quantum-dot structures. in AIP Conference Proceedings|AIP Conf. Proc.. vol. 1199, American Institute of Physics, USA, pp. 313-314, 29th International Conference on Physics of Semiconductors, ICPS 29, Rio de Janeiro, 1/07/09. https://doi.org/10.1063/1.3295427

Laplace-transform deep-level spectroscopy characterization of the intrinsic and deep-level states in self-assembled InAs quantum-dot structures. / Lin, S. W.; Song, A. M.; Peaker, A. R.
AIP Conference Proceedings|AIP Conf. Proc.. Vol. 1199 USA: American Institute of Physics, 2009. p. 313-314.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Laplace-transform deep-level spectroscopy characterization of the intrinsic and deep-level states in self-assembled InAs quantum-dot structures

AU - Lin, S. W.

AU - Song, A. M.

AU - Peaker, A. R.

PY - 2009

Y1 - 2009

N2 - The electron emission from the intrinsic and deep-level states in self-assembled InAs/GaAs quantum-dot structures is probed using the Laplace-transform deep-level transient spectroscopy. The technique shows sufficient resolution to resolve electron emission from the singly and doubly occupied QD s states. By applying an appropriate set of voltage pulses across the Schottky-diode structure, we identify the electron distribution profile in the quantum-dot intrinsic states. © 2009 American Institute of Physics.

AB - The electron emission from the intrinsic and deep-level states in self-assembled InAs/GaAs quantum-dot structures is probed using the Laplace-transform deep-level transient spectroscopy. The technique shows sufficient resolution to resolve electron emission from the singly and doubly occupied QD s states. By applying an appropriate set of voltage pulses across the Schottky-diode structure, we identify the electron distribution profile in the quantum-dot intrinsic states. © 2009 American Institute of Physics.

KW - Deep-level transient spectroscopy

KW - Laplace transform

KW - Quantum dots

U2 - 10.1063/1.3295427

DO - 10.1063/1.3295427

M3 - Conference contribution

SN - 9780735407367

VL - 1199

SP - 313

EP - 314

BT - AIP Conference Proceedings|AIP Conf. Proc.

PB - American Institute of Physics

CY - USA

T2 - 29th International Conference on Physics of Semiconductors, ICPS 29

Y2 - 1 July 2009

ER -

Laplace-transform deep-level spectroscopy characterization of the intrinsic and deep-level states in self-assembled InAs quantum-dot structures

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Keywords

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