Laplace-transform deep-level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon

P. Deixler; J. Terry; I. D. Hawkins; J. H. Evans-Freeman; A. R. Peaker; L. Rubaldo; D. K. Maude; J. C. Portal; L. Dobaczewski; K. Bonde Nielsen; A. Nylandsted Larsen; A. Mesli

doi:10.1063/1.122694

Laplace-transform deep-level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon

P. Deixler^*, J. Terry, I. D. Hawkins, J. H. Evans-Freeman, A. R. Peaker, L. Rubaldo, D. K. Maude, J. C. Portal, L. Dobaczewski, K. Bonde Nielsen, A. Nylandsted Larsen, A. Mesli

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied n-type silicon containing gold and gold-hydrogen complexes using high-resolution "Laplace" deep-level transient spectroscopy. This technique has enabled two quite distinct electron emission rates to be observed at temperatures between 240 and 300 K. These are associated with the gold acceptor and the level referred to as G4, which is observed when hydrogen and gold are present in silicon. The gold acceptor has a measured activation energy for electron emission of 558±8meV, and the G4 state of 542±8meV. The directly measured electron capture cross section for G4 is determined to be 0.6±0.1σ_{n(goldacceptor)} at 275 K from which it is inferred that the state is acceptor-like.

Original language	English
Pages (from-to)	3126-3128
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	21
DOIs	https://doi.org/10.1063/1.122694
Publication status	Published - 19 Nov 1998

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Deixler, P., Terry, J., Hawkins, I. D., Evans-Freeman, J. H., Peaker, A. R., Rubaldo, L., Maude, D. K., Portal, J. C., Dobaczewski, L., Bonde Nielsen, K., Nylandsted Larsen, A., & Mesli, A. (1998). Laplace-transform deep-level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon. Applied Physics Letters, 73(21), 3126-3128. https://doi.org/10.1063/1.122694

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title = "Laplace-transform deep-level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon",

abstract = "We have studied n-type silicon containing gold and gold-hydrogen complexes using high-resolution {"}Laplace{"} deep-level transient spectroscopy. This technique has enabled two quite distinct electron emission rates to be observed at temperatures between 240 and 300 K. These are associated with the gold acceptor and the level referred to as G4, which is observed when hydrogen and gold are present in silicon. The gold acceptor has a measured activation energy for electron emission of 558±8meV, and the G4 state of 542±8meV. The directly measured electron capture cross section for G4 is determined to be 0.6±0.1σn(goldacceptor) at 275 K from which it is inferred that the state is acceptor-like.",

author = "P. Deixler and J. Terry and Hawkins, {I. D.} and Evans-Freeman, {J. H.} and Peaker, {A. R.} and L. Rubaldo and Maude, {D. K.} and Portal, {J. C.} and L. Dobaczewski and {Bonde Nielsen}, K. and {Nylandsted Larsen}, A. and A. Mesli",

year = "1998",

month = nov,

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doi = "10.1063/1.122694",

language = "English",

volume = "73",

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journal = "Applied Physics Letters",

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T1 - Laplace-transform deep-level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon

AU - Deixler, P.

AU - Terry, J.

AU - Hawkins, I. D.

AU - Evans-Freeman, J. H.

AU - Peaker, A. R.

AU - Rubaldo, L.

AU - Maude, D. K.

AU - Portal, J. C.

AU - Dobaczewski, L.

AU - Bonde Nielsen, K.

AU - Nylandsted Larsen, A.

AU - Mesli, A.

PY - 1998/11/19

Y1 - 1998/11/19

N2 - We have studied n-type silicon containing gold and gold-hydrogen complexes using high-resolution "Laplace" deep-level transient spectroscopy. This technique has enabled two quite distinct electron emission rates to be observed at temperatures between 240 and 300 K. These are associated with the gold acceptor and the level referred to as G4, which is observed when hydrogen and gold are present in silicon. The gold acceptor has a measured activation energy for electron emission of 558±8meV, and the G4 state of 542±8meV. The directly measured electron capture cross section for G4 is determined to be 0.6±0.1σn(goldacceptor) at 275 K from which it is inferred that the state is acceptor-like.

AB - We have studied n-type silicon containing gold and gold-hydrogen complexes using high-resolution "Laplace" deep-level transient spectroscopy. This technique has enabled two quite distinct electron emission rates to be observed at temperatures between 240 and 300 K. These are associated with the gold acceptor and the level referred to as G4, which is observed when hydrogen and gold are present in silicon. The gold acceptor has a measured activation energy for electron emission of 558±8meV, and the G4 state of 542±8meV. The directly measured electron capture cross section for G4 is determined to be 0.6±0.1σn(goldacceptor) at 275 K from which it is inferred that the state is acceptor-like.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Laplace-transform deep-level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon

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