Laplace-transform deep-level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon

P. Deixler, J. Terry, I. D. Hawkins, J. H. Evans-Freeman, A. R. Peaker, L. Rubaldo, D. K. Maude, J. C. Portal, L. Dobaczewski, K. Bonde Nielsen, A. Nylandsted Larsen, A. Mesli

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied n-type silicon containing gold and gold-hydrogen complexes using high-resolution "Laplace" deep-level transient spectroscopy. This technique has enabled two quite distinct electron emission rates to be observed at temperatures between 240 and 300 K. These are associated with the gold acceptor and the level referred to as G4, which is observed when hydrogen and gold are present in silicon. The gold acceptor has a measured activation energy for electron emission of 558±8meV, and the G4 state of 542±8meV. The directly measured electron capture cross section for G4 is determined to be 0.6±0.1σn(goldacceptor) at 275 K from which it is inferred that the state is acceptor-like.

Original languageEnglish
Pages (from-to)3126-3128
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number21
DOIs
Publication statusPublished - 19 Nov 1998

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