Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics

HDB Gottlob, TJ Echtermeyer, M Schmidt, T Mollenhauer, T Wahlbrink, Max C Lemme, H Kurz

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	G12-G14
Journal	Electrochemical and solid-state letters
Volume	11
Issue number	3
Publication status	Published - 2008

Cite this

@article{d7076781b0c74a818196a1e709a5fe7b,

title = "Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics",

author = "HDB Gottlob and TJ Echtermeyer and M Schmidt and T Mollenhauer and T Wahlbrink and Lemme, {Max C} and H Kurz",

year = "2008",

language = "English",

volume = "11",

pages = "G12--G14",

journal = "Electrochemical and solid-state letters",

publisher = "Electrochemical Society",

number = "3",

}