Ligand influence on the formation of P/Se semiconductor materials from metal–organic complexes

Arunkumar Panneerselvam; Chinh Q. Nguyen; John Waters; Mohammad Malik; Paul O'Brien; James Raftery; Madeleine Helliwell

Ligand influence on the formation of P/Se semiconductor materials from metal–organic complexes

Arunkumar Panneerselvam
, Chinh Q. Nguyen
, John Waters
, Mohammad Malik
, Paul O'Brien
, James Raftery
, Madeleine Helliwell

Research output: Contribution to journal › Article › peer-review

Abstract

The complexes [Ni{(SePiPr₂)₂N}₂] (1), [Ni(Se₂PiPr₂)₂] (2), and [Co(Se₂PiPr₂)₂] (4) were synthesised and the X-ray single crystal structures of (1) and (2) were determined. Thin films of nickel selenide, cobalt selenide and cobalt phosphide have been deposited by the chemical vapour deposition method using imidodiselenophosphinato-nickel(II) (1), -cobalt(II) [Co{(SePiPr₂)₂N}₂] (3), diselenophosphinato-nickel(II) (2), -cobalt(II) (4) and diselenocarbamato-nickel(II) [Ni(Se₂CNEt₂)₂] (5), and -cobalt(III) [Co(Se₂CNEt₂)₃] (6) precursors.

Original language	English
Pages (from-to)	4499-4506
Number of pages	8
Journal	Dalton Transactions
Issue number	33
Publication status	Published - 23 Jul 2008

Cite this

@article{8cd044a8917d4ebca7292ccb57219860,

title = "Ligand influence on the formation of P/Se semiconductor materials from metal–organic complexes",

abstract = "The complexes [Ni\{(SePiPr2)2N\}2] (1), [Ni(Se2PiPr2)2] (2), and [Co(Se2PiPr2)2] (4) were synthesised and the X-ray single crystal structures of (1) and (2) were determined. Thin films of nickel selenide, cobalt selenide and cobalt phosphide have been deposited by the chemical vapour deposition method using imidodiselenophosphinato-nickel(II) (1), -cobalt(II) [Co\{(SePiPr2)2N\}2] (3), diselenophosphinato-nickel(II) (2), -cobalt(II) (4) and diselenocarbamato-nickel(II) [Ni(Se2CNEt2)2] (5), and -cobalt(III) [Co(Se2CNEt2)3] (6) precursors.",

author = "Arunkumar Panneerselvam and Nguyen, \{Chinh Q.\} and John Waters and Mohammad Malik and Paul O'Brien and James Raftery and Madeleine Helliwell",

year = "2008",

month = jul,

day = "23",

language = "English",

pages = "4499--4506",

journal = "Dalton Transactions ",

issn = "0300-9246",

publisher = "Royal Society of Chemistry",

number = "33",

}

TY - JOUR

T1 - Ligand influence on the formation of P/Se semiconductor materials from metal–organic complexes

AU - Panneerselvam, Arunkumar

AU - Nguyen, Chinh Q.

AU - Waters, John

AU - Malik, Mohammad

AU - O'Brien, Paul

AU - Raftery, James

AU - Helliwell, Madeleine

PY - 2008/7/23

Y1 - 2008/7/23

N2 - The complexes [Ni{(SePiPr2)2N}2] (1), [Ni(Se2PiPr2)2] (2), and [Co(Se2PiPr2)2] (4) were synthesised and the X-ray single crystal structures of (1) and (2) were determined. Thin films of nickel selenide, cobalt selenide and cobalt phosphide have been deposited by the chemical vapour deposition method using imidodiselenophosphinato-nickel(II) (1), -cobalt(II) [Co{(SePiPr2)2N}2] (3), diselenophosphinato-nickel(II) (2), -cobalt(II) (4) and diselenocarbamato-nickel(II) [Ni(Se2CNEt2)2] (5), and -cobalt(III) [Co(Se2CNEt2)3] (6) precursors.

AB - The complexes [Ni{(SePiPr2)2N}2] (1), [Ni(Se2PiPr2)2] (2), and [Co(Se2PiPr2)2] (4) were synthesised and the X-ray single crystal structures of (1) and (2) were determined. Thin films of nickel selenide, cobalt selenide and cobalt phosphide have been deposited by the chemical vapour deposition method using imidodiselenophosphinato-nickel(II) (1), -cobalt(II) [Co{(SePiPr2)2N}2] (3), diselenophosphinato-nickel(II) (2), -cobalt(II) (4) and diselenocarbamato-nickel(II) [Ni(Se2CNEt2)2] (5), and -cobalt(III) [Co(Se2CNEt2)3] (6) precursors.

M3 - Article

SN - 0300-9246

SP - 4499

EP - 4506

JO - Dalton Transactions

JF - Dalton Transactions

IS - 33

ER -

Ligand influence on the formation of P/Se semiconductor materials from metal–organic complexes

Abstract

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