Light-beam-induced transient spectroscopy of oxidation-induced stacking faults in silicon

J. A. Davidson, J. H. Evans, A. R. Peaker

Research output: Contribution to journalArticlepeer-review

Abstract

We have applied the technique of light-beam-induced transient spectroscopy, which characterizes minority carrier capture and emission at point and extended defects, to oxidation-induced stacking faults in n-type silicon. We have compared the minority carrier trap data with conventional deep-level transient spectra for majority carrier traps. We find that we are able to distinguish between hole capture at randomly distributed point defects (e.g Au), and hole capture at point defects which are associated with the extended-defect strain field.

Original languageEnglish
Pages (from-to)167-169
Number of pages3
JournalMaterials Science and Engineering B
Volume24
Issue number1-3
DOIs
Publication statusPublished - May 1994

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