Light emission from erbium doped Si1-xGex heterostructures

J. H. Evans-Freeman; A. T. Naveed; M. Q. Huda; A. R. Peaker; D. C. Houghton; A. C. Wright

Light emission from erbium doped Si_1-xGe_x heterostructures

J. H. Evans-Freeman^*, A. T. Naveed, M. Q. Huda, A. R. Peaker, D. C. Houghton, A. C. Wright

^*Corresponding author for this work

UMIST

Research output: Contribution to journal › Conference article › peer-review

Abstract

UHVCVD-grown Si_0.87Ge_0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54 μm have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

Original language	English
Pages (from-to)	133-138
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	533
Publication status	Published - 1998
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, United States Duration: 13 Apr 1998 → 17 Apr 1998

Cite this

@article{202ec4e0b6e6414993a284cc1008f59b,

title = "Light emission from erbium doped Si1-xGex heterostructures",

abstract = "UHVCVD-grown Si0.87Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54 μm have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.",

author = "Evans-Freeman, {J. H.} and Naveed, {A. T.} and Huda, {M. Q.} and Peaker, {A. R.} and Houghton, {D. C.} and Wright, {A. C.}",

year = "1998",

language = "English",

volume = "533",

pages = "133--138",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 13-04-1998 Through 17-04-1998",

}

TY - JOUR

T1 - Light emission from erbium doped Si1-xGex heterostructures

AU - Evans-Freeman, J. H.

AU - Naveed, A. T.

AU - Huda, M. Q.

AU - Peaker, A. R.

AU - Houghton, D. C.

AU - Wright, A. C.

PY - 1998

Y1 - 1998

N2 - UHVCVD-grown Si0.87Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54 μm have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

AB - UHVCVD-grown Si0.87Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54 μm have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

UR - http://www.scopus.com/inward/record.url?scp=0032304362&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032304362

SN - 0272-9172

VL - 533

SP - 133

EP - 138

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 13 April 1998 through 17 April 1998

ER -

Light emission from erbium doped Si_1-xGe_x heterostructures

Abstract

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