Light emission in silicon-germanium at 1.54 μm using erbium luminescence

M. Q. Huda; A. R. Peaker

Light emission in silicon-germanium at 1.54 μm using erbium luminescence

Research output: Contribution to journal › Conference article › peer-review

Abstract

The rare earth element erbium has been incorporated in silicon-germanium strained quantum well structures by ion implantation. A dopant concentration of 10¹⁸/cm³ was obtained through the process of amorphization and solid phase epitaxial regrowth. The incorporated erbium atoms were found to be electronically active producing luminescence at 1.54 μm from the characteristic ⁴I_13/2→⁴I_15/2 transition. Photoluminescence spectra of the specimens were found to be entirely dominated by atomically sharp, strong erbium signal without any contribution from band-edge or quantum well emission. The erbium luminescence was found to be temperature dependent, reducing exponentially with temperature with an activation energy of 120 meV. This energy was shown to correspond to the position of the erbium related level from the conduction band.

Original language	English
Pages (from-to)	357-362
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3465
Publication status	Published - 1 Dec 1998
Event	Proceedings of the 1998 Conference on Millimeter and Submillimeter Waves IV - San Diego, CA, USA Duration: 20 Jul 1998 → 23 Jul 1998

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@article{845b936708ce46d493752b6b5e9f5a65,

title = "Light emission in silicon-germanium at 1.54 μm using erbium luminescence",

abstract = "The rare earth element erbium has been incorporated in silicon-germanium strained quantum well structures by ion implantation. A dopant concentration of 1018/cm3 was obtained through the process of amorphization and solid phase epitaxial regrowth. The incorporated erbium atoms were found to be electronically active producing luminescence at 1.54 μm from the characteristic 4I13/2→4I15/2 transition. Photoluminescence spectra of the specimens were found to be entirely dominated by atomically sharp, strong erbium signal without any contribution from band-edge or quantum well emission. The erbium luminescence was found to be temperature dependent, reducing exponentially with temperature with an activation energy of 120 meV. This energy was shown to correspond to the position of the erbium related level from the conduction band.",

author = "Huda, {M. Q.} and Peaker, {A. R.}",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "3465",

pages = "357--362",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1998 Conference on Millimeter and Submillimeter Waves IV ; Conference date: 20-07-1998 Through 23-07-1998",

}

TY - JOUR

T1 - Light emission in silicon-germanium at 1.54 μm using erbium luminescence

AU - Huda, M. Q.

AU - Peaker, A. R.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The rare earth element erbium has been incorporated in silicon-germanium strained quantum well structures by ion implantation. A dopant concentration of 1018/cm3 was obtained through the process of amorphization and solid phase epitaxial regrowth. The incorporated erbium atoms were found to be electronically active producing luminescence at 1.54 μm from the characteristic 4I13/2→4I15/2 transition. Photoluminescence spectra of the specimens were found to be entirely dominated by atomically sharp, strong erbium signal without any contribution from band-edge or quantum well emission. The erbium luminescence was found to be temperature dependent, reducing exponentially with temperature with an activation energy of 120 meV. This energy was shown to correspond to the position of the erbium related level from the conduction band.

AB - The rare earth element erbium has been incorporated in silicon-germanium strained quantum well structures by ion implantation. A dopant concentration of 1018/cm3 was obtained through the process of amorphization and solid phase epitaxial regrowth. The incorporated erbium atoms were found to be electronically active producing luminescence at 1.54 μm from the characteristic 4I13/2→4I15/2 transition. Photoluminescence spectra of the specimens were found to be entirely dominated by atomically sharp, strong erbium signal without any contribution from band-edge or quantum well emission. The erbium luminescence was found to be temperature dependent, reducing exponentially with temperature with an activation energy of 120 meV. This energy was shown to correspond to the position of the erbium related level from the conduction band.

UR - http://www.scopus.com/inward/record.url?scp=0032305299&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032305299

SN - 0277-786X

VL - 3465

SP - 357

EP - 362

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 Conference on Millimeter and Submillimeter Waves IV

Y2 - 20 July 1998 through 23 July 1998

ER -

Light emission in silicon-germanium at 1.54 μm using erbium luminescence

Abstract

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