Abstract
An analysis of the loss mechanisms occurring in LEDs made from a number of III-V compounds is presented. The operation of the LED is divided into three processes, carrier injection or excitation, the recombination of these carriers to produce light and the extraction of the light from the semiconductor. Each of these processes has a characteristic efficiency which is dependent on the material type and these efficiencies are examined in relation to physical and current technological limitations. An attempt is made to assess how improvements in efficiency may be achieved in the future.
| Original language | English |
|---|---|
| Pages (from-to) | 5-11 |
| Number of pages | 7 |
| Journal | Microelectronics Journal |
| Volume | 7 |
| Issue number | 3 |
| Publication status | Published - 1 Jan 1976 |
Keywords
- Semiconductor diodes
- Light emitting