Light hole - Heavy hole exciton crossover in strained ZnS

K. B. Ozanyan; L. May; J. E. Nicholls; J. H C Hogg; W. E. Hagston; B. Lunn; D. E. Ashenford

doi:10.1016/0038-1098(95)00688-5

Light hole - Heavy hole exciton crossover in strained ZnS

K. B. Ozanyan, L. May, J. E. Nicholls, J. H C Hogg, W. E. Hagston, B. Lunn, D. E. Ashenford

Research output: Contribution to journal › Article › peer-review

Abstract

Near band edge photoluminescence (PL) of ZnS layers MBE-grown on GaP is investigated at 4.2K under fully strained, partially relaxed and fully relaxed conditions. PL peaks are attributed to heavy-hole (hh) or light-hole (lh)-related transitions by comparison with the calculated strain shift for the hh and lh bandgaps. It is shown that, while the free-to-bound (e,A0) transition retains its hh character over the whole range from fully strained to fully relaxed conditions, a hh-lh exciton crossover is observed at intermediate strain. This observation is interpreted within the hydrogenic model for shallow states by scaling the hh-related ionisation energies with the lh to hh effective mass ratio and comparing the result with the strain shift of the lh bandgap. Values for the deformation potentials are derived and compared with theoretical and earlier experimental ones.

Original language	English
Pages (from-to)	345-348
Number of pages	3
Journal	Solid State Communications
Volume	97
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(95)00688-5
Publication status	Published - Feb 1996

Keywords

A. semiconductors
A. thin films
D. electronic states (localized)
D. optical properties
E. luminescence

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10.1016/0038-1098(95)00688-5

Cite this

@article{3c82fa76c644403f8e0d155877d5c6f3,

title = "Light hole - Heavy hole exciton crossover in strained ZnS",

abstract = "Near band edge photoluminescence (PL) of ZnS layers MBE-grown on GaP is investigated at 4.2K under fully strained, partially relaxed and fully relaxed conditions. PL peaks are attributed to heavy-hole (hh) or light-hole (lh)-related transitions by comparison with the calculated strain shift for the hh and lh bandgaps. It is shown that, while the free-to-bound (e,A0) transition retains its hh character over the whole range from fully strained to fully relaxed conditions, a hh-lh exciton crossover is observed at intermediate strain. This observation is interpreted within the hydrogenic model for shallow states by scaling the hh-related ionisation energies with the lh to hh effective mass ratio and comparing the result with the strain shift of the lh bandgap. Values for the deformation potentials are derived and compared with theoretical and earlier experimental ones.",

keywords = "A. semiconductors, A. thin films, D. electronic states (localized), D. optical properties, E. luminescence",

author = "Ozanyan, {K. B.} and L. May and Nicholls, {J. E.} and Hogg, {J. H C} and Hagston, {W. E.} and B. Lunn and Ashenford, {D. E.}",

year = "1996",

month = feb,

doi = "10.1016/0038-1098(95)00688-5",

language = "English",

volume = "97",

pages = "345--348",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier BV",

number = "5",

}

TY - JOUR

T1 - Light hole - Heavy hole exciton crossover in strained ZnS

AU - Ozanyan, K. B.

AU - May, L.

AU - Nicholls, J. E.

AU - Hogg, J. H C

AU - Hagston, W. E.

AU - Lunn, B.

AU - Ashenford, D. E.

PY - 1996/2

Y1 - 1996/2

N2 - Near band edge photoluminescence (PL) of ZnS layers MBE-grown on GaP is investigated at 4.2K under fully strained, partially relaxed and fully relaxed conditions. PL peaks are attributed to heavy-hole (hh) or light-hole (lh)-related transitions by comparison with the calculated strain shift for the hh and lh bandgaps. It is shown that, while the free-to-bound (e,A0) transition retains its hh character over the whole range from fully strained to fully relaxed conditions, a hh-lh exciton crossover is observed at intermediate strain. This observation is interpreted within the hydrogenic model for shallow states by scaling the hh-related ionisation energies with the lh to hh effective mass ratio and comparing the result with the strain shift of the lh bandgap. Values for the deformation potentials are derived and compared with theoretical and earlier experimental ones.

AB - Near band edge photoluminescence (PL) of ZnS layers MBE-grown on GaP is investigated at 4.2K under fully strained, partially relaxed and fully relaxed conditions. PL peaks are attributed to heavy-hole (hh) or light-hole (lh)-related transitions by comparison with the calculated strain shift for the hh and lh bandgaps. It is shown that, while the free-to-bound (e,A0) transition retains its hh character over the whole range from fully strained to fully relaxed conditions, a hh-lh exciton crossover is observed at intermediate strain. This observation is interpreted within the hydrogenic model for shallow states by scaling the hh-related ionisation energies with the lh to hh effective mass ratio and comparing the result with the strain shift of the lh bandgap. Values for the deformation potentials are derived and compared with theoretical and earlier experimental ones.

KW - A. semiconductors

KW - A. thin films

KW - D. electronic states (localized)

KW - D. optical properties

KW - E. luminescence

U2 - 10.1016/0038-1098(95)00688-5

DO - 10.1016/0038-1098(95)00688-5

M3 - Article

SN - 0038-1098

VL - 97

SP - 345

EP - 348

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Light hole - Heavy hole exciton crossover in strained ZnS

Abstract

Keywords

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