Limits on charge carrier mobility in suspended graphene due to flexural phonons

Eduardo V. Castro, H. Ochoa, M. I. Katsnelson, R. V. Gorbachev, D. C. Elias, K. S. Novoselov, A. K. Geim, F. Guinea

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    Abstract

    The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T10K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m2/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate. © 2010 The American Physical Society.
    Original languageEnglish
    Article number266601
    JournalPhysical Review Letters
    Volume105
    Issue number26
    DOIs
    Publication statusPublished - 22 Dec 2010

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