Local-field effects on carrier hopping mobilities

R. W. Munn

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The work required to move a charge between different sites in a lattice subject to an electric field is treated in detail. It includes a local-field contribution when the sites are inequivalent and in non-centrosymmetric crystals also when the sites are equivalent (except for special field directions). The effect on carrier hopping mobilities is discussed, ignoring dynamical and polaron effects. In most cases of interest, the local field does not affect low-field mobilities significantly, but it can affect high-field mobilities. For amorphous materials, this effect is probably less important than fluctuations in the barriers to hopping.

    Original languageEnglish
    Article number011
    Pages (from-to)2721-2728
    Number of pages8
    JournalJournal of Physics C: Solid State Physics
    Volume8
    Issue number17
    DOIs
    Publication statusPublished - 1975

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