Localized near-band gap studies in nitrides via EELS.

A. Gutierrez-Sosa; U. Bangert; A. J. Harvey; W. R. Flavell; K. Jacobs; I. Moermann; A. Rizzi

Localized near-band gap studies in nitrides via EELS.

A. Gutierrez-Sosa
, U. Bangert
, A. J. Harvey
, W. R. Flavell
, K. Jacobs
, I. Moermann
, A. Rizzi

Research output: Contribution to journal › Article › peer-review

Abstract

EELS (PEELS) in the extreme-low loss energy range and Energy Loss Near Edge Spectroscopy (ELNES) were carried out in a cold FEG-STEM to study GaN(0001), AlGaN, and AlN. Using cross sectional samples, a study was performed of the variation of near-band gap states when stepping the e-beam parallel to the c direction along threading dislocations and in the perfect material. The aforementioned techniques, along with Energy Dispersive x-rays (EDX), were employed to study the substrate-thin film interface regions. Evidence was found of impurities gettering at dislocations and showed how this method can be used to measure small changes in near band-gap related energy values in a spatially resolved fashion. [on SciFinder (R)]

Original language	English
Journal	Institute of Physics Conference Series
Volume	169
Publication status	Published - 2001

Keywords

Band gap (EELS in nitrides localized near); Electron beams (energy loss; localized near-band gap studies in nitrides via)

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@article{59c9d1d45c6f40ad95c942dec7a0f732,

title = "Localized near-band gap studies in nitrides via EELS.",

abstract = "EELS (PEELS) in the extreme-low loss energy range and Energy Loss Near Edge Spectroscopy (ELNES) were carried out in a cold FEG-STEM to study GaN(0001), AlGaN, and AlN. Using cross sectional samples, a study was performed of the variation of near-band gap states when stepping the e-beam parallel to the c direction along threading dislocations and in the perfect material. The aforementioned techniques, along with Energy Dispersive x-rays (EDX), were employed to study the substrate-thin film interface regions. Evidence was found of impurities gettering at dislocations and showed how this method can be used to measure small changes in near band-gap related energy values in a spatially resolved fashion. [on SciFinder (R)]",

keywords = "Band gap (EELS in nitrides localized near); Electron beams (energy loss; localized near-band gap studies in nitrides via)",

author = "A. Gutierrez-Sosa and U. Bangert and Harvey, \{A. J.\} and Flavell, \{W. R.\} and K. Jacobs and I. Moermann and A. Rizzi",

year = "2001",

language = "English",

volume = "169",

journal = "Institute of Physics Conference Series",

publisher = "IOP Publishing Ltd",

}

TY - JOUR

T1 - Localized near-band gap studies in nitrides via EELS.

AU - Gutierrez-Sosa, A.

AU - Bangert, U.

AU - Harvey, A. J.

AU - Flavell, W. R.

AU - Jacobs, K.

AU - Moermann, I.

AU - Rizzi, A.

PY - 2001

Y1 - 2001

N2 - EELS (PEELS) in the extreme-low loss energy range and Energy Loss Near Edge Spectroscopy (ELNES) were carried out in a cold FEG-STEM to study GaN(0001), AlGaN, and AlN. Using cross sectional samples, a study was performed of the variation of near-band gap states when stepping the e-beam parallel to the c direction along threading dislocations and in the perfect material. The aforementioned techniques, along with Energy Dispersive x-rays (EDX), were employed to study the substrate-thin film interface regions. Evidence was found of impurities gettering at dislocations and showed how this method can be used to measure small changes in near band-gap related energy values in a spatially resolved fashion. [on SciFinder (R)]

AB - EELS (PEELS) in the extreme-low loss energy range and Energy Loss Near Edge Spectroscopy (ELNES) were carried out in a cold FEG-STEM to study GaN(0001), AlGaN, and AlN. Using cross sectional samples, a study was performed of the variation of near-band gap states when stepping the e-beam parallel to the c direction along threading dislocations and in the perfect material. The aforementioned techniques, along with Energy Dispersive x-rays (EDX), were employed to study the substrate-thin film interface regions. Evidence was found of impurities gettering at dislocations and showed how this method can be used to measure small changes in near band-gap related energy values in a spatially resolved fashion. [on SciFinder (R)]

KW - Band gap (EELS in nitrides localized near); Electron beams (energy loss; localized near-band gap studies in nitrides via)

M3 - Article

VL - 169

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

ER -

Localized near-band gap studies in nitrides via EELS.

Abstract

Keywords

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